VLMB/BG/TG31..
Vishay Semiconductors
www.DataSheet4U.com
ABSOLUTE MAXIMUM RATINGS1) VLMB3140, VLMBG3100, VLMTG3100
PARAMETER
Reverse voltage2)
DC Forward current
Surge forward current
TEST CONDITION
Tamb ≤ 80 °C
tp ≤ 10 µs
SYMBOL
VR
IF
IFSM
VALUE
5
20
0.2
Power dissipation
PV 84
Junction temperature
Operating temperature range
Tj
Tamb
110
- 40 to + 100
Storage temperature range
Thermal resistance junction/
ambient
mounted on PC board
(pad size > 16 mm2)
Tstg
RthJA
- 40 to + 100
350
Note:
1) Tamb = 25 °C, unless otherwise specified
2) Driving LED in reverse direction is suitable for short term application
UNIT
V
mA
A
mW
°C
°C
°C
K/W
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMB3140, BLUE
PARAMETER
TEST CONDITION
SYMBOL
MIN
TYP
Luminous intensity2)
Dominant wavelength
Peak wavelength
IF = 20 mA
IF = 20 mA
IF = 20 mA
IV 45 100
λd 462 470
λp 464
Angle of half intensity
Forward voltage
IF = 20 mA
IF = 20 mA
ϕ
VF
± 60
3
Reverse voltage
IR = 10 µA
VR 5
Temperature coefficient of VF
Temperature coefficient of IV
IF = 20 mA
IF = 20 mA
TCV
TCI
-4
- 0.4
Note:
1) Tamb = 25 °C, unless otherwise specified
2) in one Packing Unit IVmax/IVmin ≤ 1.6
MAX
476
4.2
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMBG3100, BLUE GREEN
PARAMETER
Luminous intensity2)
Dominant wavelength
Peak wavelength
Angle of half intensity
TEST CONDITION
IF = 20 mA
IF = 20 mA
IF = 20 mA
IF = 20 mA
SYMBOL
IV
λd
λp
ϕ
MIN
140
496
TYP MAX
220
505 514
502
± 60
Forward voltage
Reverse voltage
Temperature coefficient of VF
IF = 20 mA
IR = 10 µA
IF = 20 mA
VF
VR
TCV
5
3 4.2
-4
Temperature coefficient of IV
IF = 20 mA
TCI
- 0.2
Note:
1) Tamb = 25 °C, unless otherwise specified
2) in one Packing Unit IVmax/IVmin ≤ 1.6
UNIT
mcd
nm
nm
deg
V
V
mV/K
%/K
UNIT
mcd
nm
nm
deg
V
V
mV/K
%/K
www.vishay.com
2
Document Number 81242
Rev. 1.1, 31-Aug-07
