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AP60L02P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

भाग संख्या AP60L02P
समारोह N-CHANNEL ENHANCEMENT MODE POWER MOSFET
मैन्युफैक्चरर्स Advanced Power Electronics 
लोगो Advanced Power Electronics लोगो 
पूर्व दर्शन
1 Page
		
<?=AP60L02P?> डेटा पत्रक पीडीएफ

AP60L02P pdf
AP60L02S/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
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VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=25A
VGS=4.5V, ID=20A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=250uA
VDS=10V, ID=25A
VDS=25V, VGS=0V
VDS=20V, VGS=0V
VGS= ± 20V
ID=25A
VDS=20V
VGS=5V
VDS=15V
ID=20A
RG=3.3Ω,VGS=10V
RD=0.75Ω
VGS=0V
VDS=25V
f=1.0MHz
25 -
-V
- 0.037 - V/
- - 12 mΩ
- - 26 mΩ
1 - 3V
- 30 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 21
nC
- 2.8
nC
- 16
nC
- 8 - ns
- 75 - ns
- 22 - ns
- 20 - ns
- 605 - pF
- 415 - pF
- 195 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.26V
Tj=25, IS=50A, VGS=0V
Min. Typ. Max. Units
- - 50 A
- - 180 A
- - 1.26 V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.

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डाउनलोड[ AP60L02P Datasheet.PDF ]


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