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IXGT16N170AH1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Voltage IGBT - IXYS Corporation

भाग संख्या IXGT16N170AH1
समारोह High Voltage IGBT
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
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<?=IXGT16N170AH1?> डेटा पत्रक पीडीएफ

IXGT16N170AH1 pdf
IXGH/IXGT 16N170A
IXGH/IXGT 16N170AH1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC = IC25; VCE = 10 V
Note 2
6 10
S
Cies
1700
pF
Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz
16N170A
83
pF
16N170AH1 125
pF
Cres
www.DaQtagSheet4U.com
Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
tri
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = IC25, VGE = 15 V
RG = 10 Ω, VCE = 0.5 VCES
Note 3
30 pF
65 nC
13 nC
24 nC
36 ns
57 ns
200 350 ns
40 150 ns
0.9 1.5 mJ
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Inductive load, TJ = 125°C
IC = IC25, VGE = 15 V
RG = 10 Ω, VCE = 0.5 VCES
Note 3
(TO-247)
16N170A
16N170AH1
38
59
1.5
2.5
200
55
1.1
ns
ns
mJ
mJ
ns
ns
mJ
0.65 K/W
0.25
K/W
TO-247 AD Outline
P
e
Dim. Millimeter
Min. Max.
A 4.7 5.3
AA12
2.2 2.54
2.2 2.6
b 1.0 1.4
bb12
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Reverse Diode (FRED)
Symbol Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IRM
trr
IRM
trr
RthJC
IF = 20 A, VGE = 0 V
TJ = 125°C
IF = 20 A; -diF/dt = 150 A/µs
VGE = 0 V; VR = 1200 V
TJ = 125°C
2.5 2.95 V
2.5 V
15 A
80 ns
20 A
200 ns
0.9 K/W
Notes: 1.
2.
3.
Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
Pulse test, t 300 µs, duty cycle 2 %
Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161

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भाग संख्याविवरणविनिर्माण
IXGT16N170AH1High Voltage IGBTIXYS Corporation
IXYS Corporation


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