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IXGT15N120CD1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Low VCE(sat) IGBT - IXYS Corporation

भाग संख्या IXGT15N120CD1
समारोह Low VCE(sat) IGBT
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
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<?=IXGT15N120CD1?> डेटा पत्रक पीडीएफ

IXGT15N120CD1 pdf
IXGH 15N120BD1
IXGH 15N120CD1
IXGT 15N120BD1
IXGT 15N120CD1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
Cies
Coes
Cres
Qg
Q
ge
www.DataSheet4U.com
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
IC = IC90; VCE = 10 V,
Note 2.
12 15
VCE = 25 V, VGE = 0 V, f = 1 MHz
1700
155
38
I = I , V = 15 V, V = 0.5 V
C C90 GE
CE CES
69
13
26
Inductive load, TJ = 25°C
IC = IC90; VGE = 15 V
VCE = 0.8 VCES; RG = Roff = 10 W
Note 1.
15N120BD1
15N120CD1
15N120BD1
15N120CD1
25
15
150
160
115
1.75
1.05
Inductive
load,
T
J
=
125°C
IC = IC90; VGE = 15 V
VCE = 0.8 VCES; RG = Roff = 10 W
Note 1
15N120BD1
15N120CD1
15N120BD1
15N120CD1
25
18
1.5
270
360
250
3.5
2.1
TO-247
0.25
S
pF
pF
pF
nC
nC
nC
ns
ns
280 ns
320 ns
190 ns
3.0 mJ
1.6 mJ
ns
ns
mJ
ns
ns
mJ
mJ
mJ
0.83 K/W
K/W
TO-247 AD (IXGH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V
F
IF
IRM
t
rr
trr
RthJC
I = 20 A, V = 0 V
F GE
IF = 20 A, VGE = 0 V, TJ = 125°C
2.6 2.8 V
2.1 V
TC = 25°C
TC = 90°C
33 V
20 V
IF = 20 A; -diF/dt = 400 A/ms, VR = 600 V
V
GE
=
0
V;
T
J
=
125°C
15 A
200 ns
IF = 1 A; -diF/dt = 100 A/ms; VR = 30 V,VGE = 0 V
40
ns
1.6 K/W
Notes:
1. Switching times may increase for V (Clamp) > 0.8 • V ,
CE CES
higher TJ or increased RG.
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
Min.
Recommended
Footprint
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2

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भाग संख्याविवरणविनिर्माण
IXGT15N120CD1Low VCE(sat) IGBTIXYS Corporation
IXYS Corporation


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