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IXSH15N120AU1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT - IXYS Corporation

भाग संख्या IXSH15N120AU1
समारोह IGBT
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
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<?=IXSH15N120AU1?> डेटा पत्रक पीडीएफ

IXSH15N120AU1 pdf
IXSH15N120AU1
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
g
fs
I
C
=
IC90,
V
CE
=
10
V,
Pulse test, t < 300 µs, duty cycle < 2 %
IC(on)
VGE = 15V, VCE = 10 V
Cies
Coes
Cres
Qg
www.DataSheetQ4Uge.com
Qgc
td(on)
tri
td(off)
tfi
t
c
Eoff
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = Ic90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100µH
RG = 82 , VCLAMP = 0.8 VCES
Note 1
td(on)
tri
E(on)
td(off)
t
fi
tc
Eoff
RthJC
RthCK
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100µH
RG = 82
VCLAMP = 0.8 VCES
Note 1
Characteristic Values
Min Typ. Max.
67
S
65 A
1800
160
45
75
20
35
100
200
450
600
750
5.4
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
mJ
100
200
TBD
ns
ns
mJ
ns
900 ns
1200
ns
14.5
mJ
0.83 K/W
0.25
K/W
TO-247AD (IXSH)
Reverse Diode (FRED)
Characteristic Values
(TJ = 25ºC unless otherwise specified)
Min. Typ. Max.
VF
trr
IRM
trr
R
thJC
IF = IC90, VGE = 0V
Pulse test, t< 300 µs, duty cycle < 2%
IF = 1A; di/dt = -100A/µs; VR = 30V;
IF = IC90, VGE = 0V, -diF/dt = 240 A/µs
TJ = 100ºC, VR = 540V
TJ = 125ºC
TJ = 25ºC
40
16
300
2.3 V
2.1
60 ns
18 A
ns
1.0 K/W
Notes:
1) Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or RG values.
2) Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway.
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS Corporation
3540 Bassett Street; Santa Clara, CA 95054
Tel: 408-982-0700; Fax: 408-496-0670
IXYS Semiconductor GmbH
POB 1180; D-68619; Lampertheim, Germany
Tel: +49-6206-5030; Fax: +49-6206-503627

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डाउनलोड[ IXSH15N120AU1 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXSH15N120AU1IGBTIXYS Corporation
IXYS Corporation


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