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IXSH15N120A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT - IXYS Corporation

भाग संख्या IXSH15N120A
समारोह IGBT
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
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<?=IXSH15N120A?> डेटा पत्रक पीडीएफ

IXSH15N120A pdf
IXSH15N120A
Symbol
Test Conditions
(T = 25°C unless otherwise specified)
J
Characteristic Values
Min Typ. Max.
gfs IC = IC90, VCE = 10 V,
67
S
Pulse test, t < 300 µs, duty cycle < 2 %
IC(on)
VGE = 15V, VCE = 10 V
C V = 25 V, V = 0 V, f = 1 MHz
ies CE GE
C
oes
www.DaCtarSesheet4U.com
65
1800
160
45
A
pF
pF
pF
Q
g
Q
ge
Q
gc
td(on)
tri
t
d(off)
t
fi
E
off
I = I , V = 15 V, V = 0.5 V
C c90 GE
CE CES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100µH
R
G
=
82
,
VCLAMP
=
0.8
V
CES
Note 1
75 nC
20 nC
35 nC
100 ns
200 ns
450 ns
600 ns
5.4 mJ
td(on)
t
ri
E
(on)
td(off)
tfi
E
off
Inductive load, TJ = 125°C
I = I V = 15 V, L = 100µH
C C90, GE
R
G
=
82
VCLAMP = 0.8 VCES
Note 1
100
200
1.1
650
900
14.5
ns
ns
mJ
ns
ns
mJ
RthJC
RthCK
0.83 K/W
0.25 K/W
Notes:
1.) Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ
or RG values.
2.) Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
TO-247AD (IXSH)
Data contained herein reflects measurements and characterization data from engineering lots.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025

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अनुशंसा डेटापत्रक

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IXSH15N120AIGBTIXYS Corporation
IXYS Corporation
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IXYS Corporation


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