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UPF1010 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS - CREE

भाग संख्या UPF1010
समारोह Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS
मैन्युफैक्चरर्स CREE 
लोगो CREE लोगो 
पूर्व दर्शन
1 Page
		
<?=UPF1010?> डेटा पत्रक पीडीएफ

UPF1010 pdf
UPF1010
Maximum Ratings
Rating
Drain to Source Voltage, gate
connected to source
www.DataSheet4U.com
Gate to Source Voltage
Total Device Dissipation @ Tcase = 70°C
Derate above 70°C
4 Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VGS
PD
TSTG
TJ
Value
65
+/- 20
20
0.2
-65 to +150
200
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case
Symbol
ΘJC
Maximum
3.6, 3.2
Electrical DC Characteristics (TC=25°C unless otherwise specified)
Rating
Symbol
Min
Drain to Source Voltage, gate connected
to source (VGS=0, IDS=1mA)
Drain to Source Leakage current
(VDS=28V, VGS=0)
Gate to Source Leakage current
(VGS=20V, VDS=0)
Threshold Voltage
(VDS=10V, IDS=1mA)
Gate Quiescent Voltage
(VDS=26 V, IDS=95mA)
Drain to Source On Voltage
(VDS=10V, IDS=1A)
Forward Transconductance
(VDS=10V, ID=0.5A)
BVDSS
IDSS
IGSS
VTH
VGS(on)
VDS(on)
GM
65
-
-
2.0
3.0
-
-
4-2
Typ Max
--
- 100
- 1.0
3.0 5.0
4.0 6.0
0.9 -
.5 -
Unit
Volts
Volts
Watts
W/°C
°C
°C
Unit
°C/W
Unit
Volts
µA
µA
Volts
Volts
Volts
S

विन्यास 12 पेज
डाउनलोड[ UPF1010 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
UPF1010Broadband RF Power N-Channel Enhancement-Mode Lateral DMOSCREE
CREE


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