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P11NM60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL Power MOSFET - STMicroelectronics

भाग संख्या P11NM60
समारोह N-CHANNEL Power MOSFET
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
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<?=P11NM60?> डेटा पत्रक पीडीएफ

P11NM60 pdf
STB11NM60T4, STP11NM60
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Gate-source voltage
VGS Gate- source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC= 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total dissipation at TC = 25 °C
dv/dt (2)
Peak diode recovery voltage slope
Tstg Storage temperature range
Tj Operating junction temperature range
1. Pulse width limited by safe operating area.
2. ISD ≤ 11 A, di/dt ≤ 400 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
Value
600
±30
11
7
44
160
15
-65 to 150
Unit
V
V
A
A
W
V/ns
°C
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-amb
Thermal resistance junction-ambient
Rthj-pcb(1) Thermal resistance junction-pcb
1. When mounted on 1inch² FR-4 board, 2 oz Cu.
Value
D2PAK
TO-220
0.78
62.5
35
Unit
°C/W
Symbol
IAR
EAS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or non-repetitive (pulse width limited by Tjmax)
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
5.5
350
Unit
A
mJ
DS3653 - Rev 7
page 2/21

विन्यास 21 पेज
डाउनलोड[ P11NM60 Datasheet.PDF ]


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