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IXSH15N120BD1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Improved SCSOA Capability - IXYS Corporation

भाग संख्या IXSH15N120BD1
समारोह Improved SCSOA Capability
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXSH15N120BD1?> डेटा पत्रक पीडीएफ

IXSH15N120BD1 pdf
IXSH 15N120BD1
IXST 15N120BD1
Symbol
gfs
Cies
C
oes
Cres
Qg
www.DataSheetQ4Uge.com
Qgc
t
d(on)
tri
t
d(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
E
off
RthJC
R
thCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Note 2
7 9.5
S
V = 25 V, V = 0 V, f = 1 MHz
CE GE
I = I , V = 15 V, V = 0.5 V
C C90 GE
CE CES
1400
120
37
57
14
25
pF
pF
pF
nC
nC
nC
Inductive load, TJ = 25°C
I = I , V = 15 V
C C90 GE
RG = 10 W
VCE = 0.8 VCES
Note 3
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
R
G
=
10
W,
V
CE
=
0.8
V
CES
Note 3
(TO-247)
30 ns
25 ns
148 300 ns
126 250 ns
1.5 2.9 mJ
30 ns
25 ns
2.6 mJ
265 ns
298 ns
3.1 mJ
0.83 K/W
0.25 K/W
TO-247 AD (IXSH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IF = IC90, VGE = 0 V
TJ = 150OC
Note 2
T = 25OC
J
IRM IF = 30A; VGE = 0 V; TJ = 100°C
V
R
=
100
V;
-di /dt
F
=
100
A/ms
1.7 V
2.5 V
5.5 A
t
rr
I
F
=
1
A;
-di/dt
=
200
A/ms;
V
R
=
30
V
T=
J
25°C
30
ns
RthJC
0.9 K/W
Notes: 1. Device must be heatsunk for high temperature leakage current measurements to
avoid thermal runaway.
2. Pulse test, t £ 300 ms, duty cycle £ 2 %
3. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ orincreased RG.
Min. Recommended Footprint
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXSH15N120BD1Improved SCSOA CapabilityIXYS Corporation
IXYS Corporation


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