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IXSH30N60BD1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Speed IGBT - IXYS Corporation

भाग संख्या IXSH30N60BD1
समारोह High Speed IGBT
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
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<?=IXSH30N60BD1?> डेटा पत्रक पीडीएफ

IXSH30N60BD1 pdf
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
www.DataSheet4U.com
t
d(on)
tri
t
d(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
t
fi
Eoff
R
thJC
RthCK
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle £ 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC90; VGE = 15 V
VCE = 0.8 VCES; RG = 4.7 W
Note 1.
Inductive load, TJ = 125°C
IC = IC90; VGE = 15 V
VCE = 0.8 VCES; RG = 4.7 W
Note 1
10
3100
240
30
100
30
38
30
30
150
140
1.5
30
35
0.5
270
250
2.5
TO-247
TO-264
0.25
0.15
S
pF
pF
pF
nC
nC
nC
ns
ns
270 ns
270 ns
2.5 mJ
ns
ns
mJ
ns
ns
mJ
0.62 K/W
K/W
K/W
TO-247 AD (IXSH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-264 AA (IXSK) Outline
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IRM
trr
RthJC
IF = IC90, VGE = 0 V
Note 2
TJ = 150 °C
T = 25 °C
J
IF = 50A; VGE = 0 V; TJ = 100 °C
VR = 100 V; -diF/dt = 100 A/ms
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25°C
1.7 V
2.5 V
2 2.5 A
35 50 ns
.09 K/W
Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG.
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
TO-268AA (IXST) (D3 PAK)
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
Dim. Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c 0.53 0.83
D 25.91 26.16
E 19.81 19.96
e 5.46 BSC
J 0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Inches
Min. Max.
.190
.100
.079
.044
.094
.114
.202
.114
.083
.056
.106
.122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000
.000
.800
.090
.010
.010
.820
.102
.125
.239
.330
.150
.070
.144
.247
.342
.170
.090
.238
.062
.248
.072
Min. Recommended Footprint
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-5

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXSH30N60BD1High Speed IGBTIXYS Corporation
IXYS Corporation


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