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IXSA10N60B2D1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Speed IGBT - IXYS Corporation

भाग संख्या IXSA10N60B2D1
समारोह High Speed IGBT
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXSA10N60B2D1?> डेटा पत्रक पीडीएफ

IXSA10N60B2D1 pdf
Symbol
gfs
Cies
Coes
Cres
Qg
www.DataShQegeet4U.com
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCS
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 10A; VCE = 10 V, Note 1
VCE = 25 V, VGE = 0 V
f = 1 MHz
2.0 3.6
400
50
11
S
pF
pF
pF
IC = 10A, VGE = 15 V, VCE = 0.5 VCES
17 nC
6 nC
7.5 nC
Inductive load, TJ = 25°C
IVCC=E
10A,
= 0.8
VVGCEES=,
15
RG
V
=
30
Switching
(Clamp) >
times may
0.8 • VCES,
increase
higher TJ
for
or
VCE
increased RG
Inductive load, TJ = 125°C
VICC=E
10 A,
= 0.8
VVCGEES=, R1G5
V
= 30
Switching times may increase for
VCE (Clamp) > 0.8 • VCES, higher TJ
or increased RG
TO-220
30
30
180
165
430
30
30
0.32
260
270
790
ns
ns
ns
ns
750 µJ
ns
ns
mJ
ns
ns
µJ
1.25 K/W
0.25
K/W
IXSA 10N60B2D1
IXSP 10N60B2D1
TO-220 AB (IXSP) Outline
Dim. Millimeter
Min. Max.
A 12.70 13.97
B 14.73 16.00
C 9.91 10.66
D 3.54 4.08
E 5.85 6.85
F 2.54 3.18
G 1.15 1.65
H 2.79 5.84
J 0.64 1.01
K 2.54 BSC
M 4.32 4.82
N 1.14 1.39
Q 0.35 0.56
R 2.29 2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
TO-263 (IXSA) Outline
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF IF = 10A, VGE = 0 V
TJ =150°C
1.66 V
2.66 V
tIRrrM
IVFR==1120A0, VVGE = 0 V, -diF/dt = 100 A/µs
TTJJ
=
=
100°C
100°C
1.5
90
A
ns
trr IF = 1 A; -di/dt = 100 A/µs; VR = 30 V
RthJC
Note 1: Pulse test, t 300 µs, duty cycle d 2 %
25 ns
2.5 K/W
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
7.11 8.13
9.65 10.29
6.86 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .015
.018 .029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585

विन्यास 6 पेज
डाउनलोड[ IXSA10N60B2D1 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXSA10N60B2D1High Speed IGBTIXYS Corporation
IXYS Corporation


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