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IXGT30N60BU1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HiPerFAST IGBT - IXYS Corporation

भाग संख्या IXGT30N60BU1
समारोह HiPerFAST IGBT
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGT30N60BU1?> डेटा पत्रक पीडीएफ

IXGT30N60BU1 pdf
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g I = I ; V = 10 V,
fs C C110 CE
Pulse test, t 300 µs, duty cycle 2 %
25 S
Cies
Coes
Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz
Q
g
Qge
Q
gc
www.DatatSdh(oen)et4U.com
tri
td(off)
tfi
Eoff
IC = IC110, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
I
C
=
I,
C110
V
GE
=
15
V,
L
=
100
µH,
VCE = 0.8 VCES, RG = Roff = 4.7
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
td(on) Inductive load, TJ = 150°C
t
ri
IC = IC110, VGE = 15 V, L = 100 µH
Eon VCE = 0.8 VCES, RG = Roff = 4.7
td(off) Remarks: Switching times may
tfi increase for VCE (Clamp) > 0.8 • VCES,
Eoff higher TJ or increased RG
2710
240
50
110
22
40
25
30
130
100
1.0
25
35
1
200
230
2.5
pF
pF
pF
150 nC
35 nC
75 nC
ns
ns
220 ns
190 ns
2.0 mJ
ns
ns
mJ
ns
ns
mJ
RthJC
RthCK
0.62 K/W
0.25
K/W
IXGH 30N60BU1
IXGT 30N60BU1
TO-247 AD Outline
P
e
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-247 AA (D3 PAK)
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V I = I , V = 0 V,
F F C110 GE
Pulse test, t 300 µs, duty cycle d 2 %
1.6 V
IRM
trr
R
thJC
IF = IC110, VGE = 0 V, -diF/dt = 240 A/µs
VR = 360 V
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V
10 15 A
35 50 ns
1 K/W
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC
.010 BSC
L4 3.80 4.10 .150 .161
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025

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डाउनलोड[ IXGT30N60BU1 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGT30N60BU1HiPerFAST IGBTIXYS Corporation
IXYS Corporation


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