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IXGT31N60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Ultra-Low VCE(sat) IGBT - IXYS Corporation

भाग संख्या IXGT31N60
समारोह Ultra-Low VCE(sat) IGBT
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGT31N60?> डेटा पत्रक पीडीएफ

IXGT31N60 pdf
IXGH 31N60
IXGT 31N60
Symbol
gfs
Cies
C
oes
Cres
Qg
www.DataSheetQ4Uge.com
Qgc
t
d(on)
tri
t
d(off)
tfi
E
off
td(on)
t
ri
Eon
t
d(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle £ 2 %
10 16
S
V = 25 V, V = 0 V, f = 1 MHz
CE GE
1500
130
40
pF
pF
pF
I = I , V = 15 V, V = 0.5 V
C C90 GE
CE CES
Inductive load, TJ = 25°C
I
C
=
I,
C90
V
GE
=
15
V,
L
=
100
mH,
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Inductive load, TJ = 125°C
I
C
=
I,
C90
V
GE
=
15
V,
L
=
100
mH
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
80 100 nC
15 30 nC
30 40 nC
15 ns
25 ns
400 800 ns
400 800 ns
6 mJ
15 ns
25 ns
0.2 mJ
800 ns
800 ns
12 mJ
(TO-247)
0.83 K/W
0.25 K/W
TO-247 AD (IXFH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
Min. Recommended Footprint
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGT31N60Ultra-Low VCE(sat) IGBTIXYS Corporation
IXYS Corporation


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