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APT4020BVFR डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - POWER MOS V FREDFET - Advanced Power Technology

भाग संख्या APT4020BVFR
समारोह POWER MOS V FREDFET
मैन्युफैक्चरर्स Advanced Power Technology 
लोगो Advanced Power Technology लोगो 
पूर्व दर्शन
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<?=APT4020BVFR?> डेटा पत्रक पीडीएफ

APT4020BVFR pdf
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge 3
Qgs Gate-Source Charge
Qgd Gate-Drain ("Miller ") Charge
t d(on)
tr
Turn-on Delay Time
Rise Time
td(off) Turn-off Delay Time
t f Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 200V
ID = 23A @ 25°C
VGS = 15V
VDD = 200V
ID = 23A @ 25°C
RG = 1.6
www.DataSheeSt4OUU.coRmCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
dv/dt
trr
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -23A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -23A, di/dt = 100A/µs)
Reverse Recovery Charge
Qrr (IS = -23A, di/dt = 100A/µs)
IRRM
Peak Recovery Current
(IS = -23A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
APT4020B_SVFR(G)
MIN TYP MAX UNIT
2650
400 pF
180
120
16 nC
60
10
11
ns
38
7
MIN TYP MAX UNIT
23
Amps
92
1.3 Volts
15 V/ns
?
ns
?
?
µC
?
?
Amps
?
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.50
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 3.63mH, RG = 25, Peak IL = 23A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS -ID[Cont.] di/dt 700A/µs VR VDSS TJ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.5
D=0.5
0.1
0.05
0.2
0.1
0.05
0.01
0.005
0.02
0.01
SINGLE PULSE
Note:
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

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भाग संख्याविवरणविनिर्माण
APT4020BVFRPOWER MOS V FREDFETAdvanced Power Technology
Advanced Power Technology
APT4020BVFRGPOWER MOS V FREDFETAdvanced Power Technology
Advanced Power Technology


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