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4N28 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - (4N25 - 4N28) Industry Standard Single Channel 6 Pin DIP Optocoupler - Infineon Technologies

भाग संख्या 4N28
समारोह (4N25 - 4N28) Industry Standard Single Channel 6 Pin DIP Optocoupler
मैन्युफैक्चरर्स Infineon Technologies 
लोगो Infineon Technologies लोगो 
पूर्व दर्शन
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<?=4N28?> डेटा पत्रक पीडीएफ

4N28 pdf
Maximum Ratings TA=25°C
Emitter
Reverse Voltage .......................................................................................... 6.0 V
Forward Current ........................................................................................ 60 mA
Surge Current (t10 µs)............................................................................... 2.5 A
Power Dissipation................................................................................... 100 mW
Detector
Collector-Emitter Breakdown Voltage........................................................... 70 V
Emitter-Base Breakdown Voltage ................................................................ 7.0 V
Collector Current ....................................................................................... 50 mA
Collector Current(t <1.0 ms).................................................................... 100 mA
Power Dissipation................................................................................... 150 mW
Package
Isolation Test Voltage.......................................................................... 5300 VRMS
Creepage .............................................................................................. 7.0 mm
Clearance ............................................................................................. 7.0 mm
Isolation Thickness between Emitter and Detector ............................... 0.4 mm
www.DataShCeeotm4Up.acroamtive Tracking Index per DIN IEC 112/VDE0303, part 1 .................. 175
Isolation Resistance
VIO=500 V, TA=25°C...............................................................................1012
VIO=500 V, TA=100°C............................................................................ 1011
Storage Temperature................................................................ 55°C to +150°C
Operating Temperature ............................................................ 55°C to +100°C
Junction Temperature................................................................................ 100°C
Soldering Temperature (max. 10 s, dip soldering:
distance to seating plane 1.5 mm) ...................................................... 260°C
4N25/26/27/28—Characteristics TA=25°C
Emitter
Symbol Min. Typ.
Forward Voltage*
Reverse Current*
Capacitance
Detector
VF 1.3
IR 0.1
CO 25
Breakdown Voltage*
ICEO(dark)*
Collector-Emitter BVCEO 30
Emitter-Collector BVECO
7.0
Collector-Base
BVCBO 70
4N25/26/27
4N28
5.0
10
ICBO(dark)*
Capacitance, Collector-Emitter
Package
DC Current Transfer Ratio*
4N25/26
4N27/28
CCE
CTR
2.0
6.0
20 50
10 30
Isolation Voltage*
4N25
4N26/27
VIO 2500
1500
4N28
500
Saturation Voltage, Collector-Emitter
Resistance, Input to Output*
Coupling Capacitance
Rise and Fall Times
VCE(sat)
RIO 100
CIO 0.5
tr, tf 2.0
* Indicates JEDEC registered values
2001 Inneon Technologies Corp. Optoelectronics Division San Jose, CA
www.inneon.com/opto 1-888-Inneon (1-888-463-4636)
254
Max.
1.5
100
Unit
V
µA
pF
V
50 nA
100
20 nA
pF
%
V
0.5 V
G
pF
µs
Condition
IF=50 mA
VR=3.0 V
VR=0
IC=1.0 mA
IE=100 µA
IC=100 µA
VCE=10 V, (base open)
VCB=10 V, (emitter open)
VCE=0
VCE=10 V, IF=10 mA
Peak, 60 Hz
ICE=2.0 mA, IF=50 mA
VIO=500 V
f=1.0 MHz
IF=10 mA
VCE=10 V, RL=100
Phototransistor, Industry Standard
March 27, 2000-00

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डाउनलोड[ 4N28 Datasheet.PDF ]


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