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APT35GP120B2DF2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOS 7 IGBT - Advanced Power Technology

भाग संख्या APT35GP120B2DF2
समारोह Power MOS 7 IGBT
मैन्युफैक्चरर्स Advanced Power Technology 
लोगो Advanced Power Technology लोगो 
पूर्व दर्शन
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APT35GP120B2DF2 pdf
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
RBSOA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Reverse Bias Safe Operating Area
td(on) Turn-on Delay Time
tr Current Rise Time
td(off) Turn-off Delay Time
tf Current Fall Time
Eon1 Turn-on Switching Energy 4
www.DataSheEeotn42U.coTmurn-on Switching Energy (Diode) 5
Eoff Turn-off Switching Energy 6
td(on) Turn-on Delay Time
tr Current Rise Time
td(off) Turn-off Delay Time
tf
Eon1
Eon2
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Eoff Turn-off Switching Energy 6
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 600V
IC = 35A
TJ = 150°C, RG = 5Ω, VGE =
15V, L = 100µH,VCE = 960V
Inductive Switching (25°C)
VCC = 800V
VGE = 15V
IC = 35A
RG = 5
TJ = +25°C
MIN
140
Inductive Switching (125°C)
VCC = 800V
VGE = 15V
IC = 35A
RG = 5
TJ = +125°C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
RΘJC
RΘJC
WT
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
MIN
APT35GP120B2DF2
TYP
3240
248
31
7
150
21
62
MAX
UNIT
pF
V
nC
A
16
26
94
53
TBD
1740
907
16
26
147
100
TBD
2842
2325
ns
µJ
ns
µJ
TYP MAX UNIT
.23
°C/W
.59
6.10 gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.

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भाग संख्याविवरणविनिर्माण
APT35GP120B2DF2Power MOS 7 IGBTAdvanced Power Technology
Advanced Power Technology


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