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APT35GP120JDQ2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - POWER MOS 7 IGBT - Advanced Power Technology

भाग संख्या APT35GP120JDQ2
समारोह POWER MOS 7 IGBT
मैन्युफैक्चरर्स Advanced Power Technology 
लोगो Advanced Power Technology लोगो 
पूर्व दर्शन
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APT35GP120JDQ2 pdf
DYNAMIC CHARACTERISTICS
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
RBSOA Reverse Bias Safe Operating Area
td(on)
Turn-on Delay Time
tr
td(off)
Current Rise Time
Turn-off Delay Time
tf Current Fall Time
Eon1
Turn-on Switching Energy 4
www.DataSheEeotn42U.coTmurn-on Switching Energy (Diode) 5
Eoff
td(on)
Turn-off Switching Energy 6
Turn-on Delay Time
tr
td(off)
Current Rise Time
Turn-off Delay Time
tf Current Fall Time
Eon1
Eon2
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Eoff Turn-off Switching Energy 6
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 600V
IC = 35A
TJ = 150°C, RG = 4.3Ω, VGE =
15V, L = 100µH,VCE = 960V
Inductive Switching (25°C)
VCC = 600V
VGE = 15V
IC = 35A
RG = 4.3
TJ = +25°C
MIN
140
Inductive Switching (125°C)
VCC = 600V
VGE = 15V
IC = 35A
RG = 4.3
TJ = +125°C
APT35GP120JDQ2
TYP
3240
250
31
7.5
150
21
60
MAX
UNIT
pF
V
nC
16
20
95
40
750
1305
680
16
20
145
75
750
2130
1745
A
ns
µJ
ns
µJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
RθJC
RθJC
WT
VIsolation
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
MIN
Package Weight
RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500
TYP
29.2
MAX
.44
1.10
UNIT
°C/W
gm
Volts
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4
aEdond1inisg
the clamped inductive turn-on energy of the IGBT only,
to the IGBT turn-on loss. Tested in inductive switching
without the effect
test circuit shown
of
in
a commutating diode reverse recovery current
figure 21, but with a Silicon Carbide diode.
5
lEoosns2.
is the
(See
clamped inductive
Figures 21, 22.)
turn-on
energy
that
includes
a
commutating
diode
reverse
recovery
current
in
the
IGBT
turn-on
switching
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained h

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भाग संख्याविवरणविनिर्माण
APT35GP120JDQ2POWER MOS 7 IGBTAdvanced Power Technology
Advanced Power Technology


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