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APT35GP120B डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - POWER MOS 7 IGBT - Advanced Power Technology

भाग संख्या APT35GP120B
समारोह POWER MOS 7 IGBT
मैन्युफैक्चरर्स Advanced Power Technology 
लोगो Advanced Power Technology लोगो 
पूर्व दर्शन
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APT35GP120B pdf
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
RBSOA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Reverse Bias Safe Operating Area
td(on) Turn-on Delay Time
tr Current Rise Time
td(off) Turn-off Delay Time
tf Current Fall Time
Eon1 Turn-on Switching Energy 4
www.DataSheEeotn42U.coTmurn-on Switching Energy (Diode) 5
Eoff Turn-off Switching Energy 6
td(on) Turn-on Delay Time
tr Current Rise Time
td(off) Turn-off Delay Time
tf
Eon1
Eon2
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Eoff Turn-off Switching Energy 6
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 600V
IC = 35A
TJ = 150°C, RG = 5Ω, VGE =
15V, L = 100µH,VCE = 960V
Inductive Switching (25°C)
VCC = 600V
VGE = 15V
IC = 35A
RG = 5
TJ = +25°C
MIN
140
Inductive Switching (125°C)
VCC = 600V
VGE = 15V
IC = 35A
RG = 5
TJ = +125°C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
RΘJC
RΘJC
WT
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
MIN
TYP
3240
248
31
7.5
150
21
62
APT35GP120B
MAX UNIT
pF
V
nC
A
16
20
94
40
750
1305
680
16
20
147
75
750
2132
1744
ns
µJ
ns
µJ
TYP MAX UNIT
.23
°C/W
N/A
5.90 gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.

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