DataSheet.in

APT35GN120L2DQ2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT - Advanced Power Technology

भाग संख्या APT35GN120L2DQ2
समारोह IGBT
मैन्युफैक्चरर्स Advanced Power Technology 
लोगो Advanced Power Technology लोगो 
पूर्व दर्शन
1 Page
		
<?=APT35GN120L2DQ2?> डेटा पत्रक पीडीएफ

APT35GN120L2DQ2 pdf
DYNAMIC CHARACTERISTICS
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
SSOA Switching Safe Operating Area
SCSOA Short Circuit Safe Operating Area
td(on)
Turn-on Delay Time
tr Current Rise Time
td(off)
Turn-off Delay Time
www.DataSheettf4U.coCmurrent Fall Time
Eon1
Eon2
Eoff
td(on)
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
tr
td(off)
Current Rise Time
Turn-off Delay Time
tf
Eon1
Eon2
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Eoff Turn-off Switching Energy 66
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 600V
IC = 35A
TJ = 150°C, RG = 2.27, VGE =
15V, L = 100µH,VCE = 1200V
VCC = 960V, VGE = 15V,
TJ = 125°C, RG = 2.27
Inductive Switching (25°C)
VCC = 800V
VGE = 15V
IC = 35A
RG = 2.27
TJ = +25°C
MIN
105
10
Inductive Switching (125°C)
VCC = 800V
VGE = 15V
IC = 35A
RG = 2.27
TJ = +125°C
APT35GN120L2DQ2(G)
TYP
2500
150
120
9.5
220
15
130
MAX
UNIT
pF
V
nC
A
24
22
300
55
TBD
2395
2315
24
22
365
100
TBD
3745
3435
µs
ns
µJ
ns
µJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
RθJC
RθJC
WT
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
MIN TYP MAX UNIT
.33
.61
°C/W
5.9 gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4
aEdond1inisg
the clam ped inductive turn-on-energy of the
to the IGBT turn-on loss. (See Figure 24.)
IGBT
only,
without
the
effect
of
a
commutating
diode
reverse
recovery
current
5
lEoosns2.
is the
(See
clamped inductive
Figures 21, 22.)
turn-on
energy
that
includes
a
commutating
diode
reverse
recovery
current
in
the
IGBT
turn-on
switching
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452)
APT Reserves the right to change, without notice, the specifications and information contained herein.

विन्यास 9 पेज
डाउनलोड[ APT35GN120L2DQ2 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
APT35GN120L2DQ2IGBTAdvanced Power Technology
Advanced Power Technology
APT35GN120L2DQ2GIGBTAdvanced Power Technology
Advanced Power Technology


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English