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D10PF06 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Power MOSFET - STMicroelectronics

भाग संख्या D10PF06
समारोह P-Channel Power MOSFET
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
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<?=D10PF06?> डेटा पत्रक पीडीएफ

D10PF06 pdf
STD10PF06
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
3.75
100
275
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 25 V)
Max Value
10
125
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
60
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±1
Unit
V
µA
µA
µA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
ID = 5 A
Min.
2
Typ.
0.18
Max.
4
0.20
Unit
V
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 25 V
ID=5 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
2
Typ.
5
850
230
75
Max.
Unit
S
pF
pF
pF
2/9

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डाउनलोड[ D10PF06 Datasheet.PDF ]


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