DataSheet.in

IFR830A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - International Rectifier

भाग संख्या IFR830A
समारोह MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=IFR830A?> डेटा पत्रक पीडीएफ

IFR830A pdf
www.DataSheet4U.com
IRF830A
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS Gate-to-Source Reverse Leakage
Min. Typ.
500 –––
––– 0.60
––– –––
2.0 –––
––– –––
––– –––
––– –––
––– –––
Max.
–––
–––
1.4
4.5
25
250
100
-100
Units
V
V
µA
nA
Conditions
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 3.0A „
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs Forward Transconductance
2.8 ––– –––
Qg Total Gate Charge
––– ––– 24
Qgs Gate-to-Source Charge
––– ––– 6.3
Qgd Gate-to-Drain ("Miller") Charge
––– ––– 11
td(on)
Turn-On Delay Time
––– 10 –––
tr Rise Time
––– 21 –––
td(off)
Turn-Off Delay Time
––– 21 –––
tf Fall Time
––– 15 –––
Ciss Input Capacitance
––– 620 –––
Coss Output Capacitance
––– 93 –––
Crss Reverse Transfer Capacitance
––– 4.3 –––
Coss Output Capacitance
––– 886 –––
Coss Output Capacitance
––– 27 –––
Coss eff. Effective Output Capacitance
Avalanche Characteristics
––– 39 –––
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 3.0A
ID = 5.0A
VDS = 400V
VGS = 10V, See Fig. 6 and 13 „
VDD = 250V
ID = 5.0A
RG = 14
RD = 49,See Fig. 10
„
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V …
Parameter
EAS Single Pulse Avalanche Energy‚
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance
Typ.
–––
–––
–––
Max.
230
5.0
7.4
Units
mJ
A
mJ
Parameter
Typ.
Max.
Units
RθJC
RθCS
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
––– 1.7
0.50 ––– °C/W
RθJA
Junction-to-Ambient
––– 62
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
––– ––– 5.0
––– ––– 20
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
VSD Diode Forward Voltage
––– ––– 1.5 V TJ = 25°C, IS = 5.0A, VGS = 0V „
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
––– 430 650 ns TJ = 25°C, IF = 5.0A
––– 1.62 2.4 µC di/dt = 100A/µs „
ton Forward Turn-On Time
2
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com

विन्यास 8 पेज
डाउनलोड[ IFR830A Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IFR830AMOSFETInternational Rectifier
International Rectifier


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English