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IRG4IBC20WPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4IBC20WPBF
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRG4IBC20WPBF pdf
IRG4IBC20WPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — —
V(BR)ECS
Emitter-to-Collector Breakdown Voltage „ 18 — —
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.48 —
— 2.16 2.6
V
V
V/°C
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 6.5A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance …
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
— 2.55 — V IC = 13A
See Fig.2, 5
— 2.05 —
IC = 6.5A , TJ = 150°C
3.0 — 6.0
VCE = VGE, IC = 250µA
— -8.8 — mV/°C VCE = VGE, IC = 250µA
5.5 8.3 — S VCE = 100 V, IC = 6.5A
— — 250 µA VGE = 0V, VCE = 600V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 26 38
IC = 6.5A
— 3.7 5.5 nC VCC = 400V
See Fig.8
— 10 15
VGE = 15V
— 22 —
— 14 — ns TJ = 25°C
— 110 160
IC = 6.5A, VCC = 480V
— 64 96
VGE = 15V, RG = 50
— 0.06 —
Energy losses include "tail"
— 0.08 — mJ See Fig. 9, 10, 14
— 0.14 0.2
— 21 —
TJ = 150°C,
— 15 —
— 150 —
ns IC = 6.5A, VCC = 480V
VGE = 15V, RG = 50
— 150 —
Energy losses include "tail"
— 0.34 — mJ See Fig. 10, 11, 14
— 7.5 — nH Measured 5mm from package
— 490 —
VGE = 0V
— 38 — pF VCC = 30V
See Fig. 7
— 8.8 —
ƒ = 1.0MHz
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50,
(See fig. 13a)
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
„ Pulse width 80µs; duty factor 0.1%.
… Pulse width 5.0µs, single shot.
† t = 60s, f = 60Hz
2 www.irf.com

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