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EFS1J डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 1.0A LOW VF SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE - Won-Top Electronics

भाग संख्या EFS1J
समारोह 1.0A LOW VF SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE
मैन्युफैक्चरर्स Won-Top Electronics 
लोगो Won-Top Electronics लोगो 
पूर्व दर्शन
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EFS1J pdf
1.00
0.75
0.50
0.25
Single phase half wave
Resistive or Inductive load
0
0
30
25 50 75 100 125 150
TL, LEAD TEMPERATURE ( ° C)
Fig. 1 Forward Current Derating Curve
175
Pulse width
8.3 ms single half-sine-wave
(JEDEC method)
20
10
Tj = 25°C
10 Pulse width = 300µs
1.0
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
100
Tj = 25°C
f = 1.0MHz
10
0
1 10 100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Peak Forward Surge Current
50NI (Non-inductive)
10NI
(+)
50V DC
Approx
(-)
Device
Under
Test
1.0
NI
Oscilloscope
(Note 1)
(-)
Pulse
Generator
(Note 2)
(+)
1
1
+0.5A
10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
trr
100
0A
-0.25A
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
EFS1J
2 of 4
© 2006 Won-Top Electronics

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भाग संख्याविवरणविनिर्माण
EFS1J1.0A LOW VF SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODEWon-Top Electronics
Won-Top Electronics


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