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IRF5NJZ34 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HEXFET POWER MOSFET SURFACE MOUNT - International Rectifier

भाग संख्या IRF5NJZ34
समारोह HEXFET POWER MOSFET SURFACE MOUNT
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRF5NJZ34 pdf
IRF5NJZ34
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
55 — —
BVDSS/TJ Temperature Coefficient of Breakdown — 0.054 —
Voltage
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 250µA
RDS(on)
Static Drain-to-Source On-State
Resistance
— — 0.04
VGS = 10V, ID = 16A
VGS(th)
gfs
IDSS
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
2.0 — 4.0 V
8.0 — — S ( )
— — 25 µA
— — 250
— — 100
— — -100 nA
— — 34
— — 7.0 nC
— — 14
VDS = VGS, ID = 250µA
VDS = 10V, IDS = 16A
VDS = 55V ,VGS=0V
VDS = 44V,
VGS = 0V, TJ =125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 22A
VDS = 44V
— — 12
— — 28
— — 30 ns
VDD = 28V, ID = 22A,
VGS =10V, RG = 13
— — 30
— 4.0 — nH
Measured from the center of
drain pad to center of source pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 695 —
— 252 —
— 100 —
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS Continuous Source Current (Body Diode) — — 22* A
ISM Pulse Source Current (Body Diode)
— — 88
Test Conditions
VSD Diode Forward Voltage
trr Reverse Recovery Time
QRR Reverse Recovery Charge
— — 1.6 V
— — 86 nS
— — 200 nC
Tj = 25°C, IS = 22A, VGS = 0V
Tj = 25°C, IF = 22A, di/dt 100A/µs
VDD 25V
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
— — 3.13 °C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRF5NJZ34HEXFET POWER MOSFET SURFACE MOUNTInternational Rectifier
International Rectifier


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