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IRG4BC30FD-S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4BC30FD-S
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRG4BC30FD-S pdf
IRG4BC30FD-S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
eCollector-to-Emitter Breakdown Voltage
600 — — V VGE = 0V, IC = 250µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.69 — V/°C VGE = 0V, IC = 1mA
— 1.59 1.8
IC = 17A
VGE = 15V
VCE(on)
Collector-to-Emitter Voltage
— 1.99 —
V IC = 31A
See Fig. 2, 5
— 1.7 —
IC = 17A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 — 6.0 V VCE = VGE, IC = 250µA
VGE(th)/TJ
gfe
Threshold Voltage temp. coefficient
fForward Transconductance
— -11
6.1 10
— mV/°C VCE = VGE, IC = 250µA
— S VCE = 100V, IC = 17A
ICES
Zero Gate Voltage Collector Current
— — 250 µA VGE = 0V, VCE = 600V
— — 2500
VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop
— 1.4 1.7 V IF = 12A
See Fig. 13
— 1.3 1.6
IF = 12A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge (turn-on)
— 51 77
IC = 17A
Qge Gate-to-Emitter Charge (turn-on)
— 7.9 12 nC VCC = 400V
See Fig. 8
Qgc
Gate-to-Collector Charge (turn-on)
— 19 28
VGE = 15V
td(on)
Turn-On delay time
— 42 —
TJ = 25°C
tr Rise time
— 26 — ns IC = 17A, VCC = 480V
td(off)
Turn-Off delay time
— 230 350
VGE = 15V, RG = 23
tf Fall time
— 160 230
Energy losses inlcude "tail" and
Eon Turn-On Switching Loss
— 0.63 —
diode reverse recovery.
Eoff Turn-Off Switching Loss
— 1.39 — mJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss
— 2.02 3.9
td(on)
Turn-On delay time
— 42 —
TJ = 150°C
See Fig. 9,10,11,18
tr Rise time
— 27 — ns IC = 17A, VCC = 480V
td(off)
Turn-Off delay time
— 310 —
VGE = 15V, RG = 23
tf Fall time
— 310 —
Energy losses inlcude "tail" and
Ets Total Switching Loss
— 3.2 — mJ diode reverse recovery.
LE Internal Emitter Inductance
— 7.5 — nH Measured 5mm from package
Cies Input Capacitance
— 1100 —
VGE = 0V
Coes Output Capacitance
— 74 — pF VCC = 30V
See Fig. 7
Cres Reverse Transfer Capacitance
— 14 —
f = 1.0MHz
trr Diode Reverse Recovery Time
— 42 60 ns TJ = 25°C See Fig.
— 80 120
TJ = 125°C
14
IF = 12A
Irr
Diode Peak Reverse Recovery Current
— 3.5 6.0 A TJ = 25°C See Fig.
— 5.6 10
TJ = 125°C
15
VR = 200V
Qrr Diode Reverse Recovery Charge
— 80 180 nC TJ = 25°C See Fig.
220 600
TJ = 125°C
16
di/dt 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
— 180 — A/µs TJ = 25°C See Fig.
During tb
— 120 —
TJ = 125°C
17
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