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IRGS6B60KD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRGS6B60KD
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRGB6B60KDPbF/IRGS/SL6B60KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 500µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
––– 0.3 ––– V/°C
1.5 1.80 2.20 V
––– 2.20 2.50
VGE = 0V, IC = 1.0mA, (25°C-150°C)
IC = 5.0A, VGE = 15V
5, 6,7
IC = 5.0A,VGE = 15V,
TJ = 150°C 9,10,11
VGE(th)
Gate Threshold Voltage
3.5 4.5 5.5 V VCE = VGE, IC = 250µA
9,10,11
VGE(th)/TJ Temperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C) 12
gfe Forward Transconductance
––– 3.0 ––– S VCE = 50V, IC = 5.0A, PW=80µs
ICES
Zero Gate Voltage Collector Current
––– 1.0 150 µA VGE = 0V, VCE = 600V
––– 200 500
VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop
––– 1.25 1.45
––– 1.20 1.40 V
IC = 5.0A
IC = 5.0A
TJ = 150°C
8
IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
Qg
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Cies
Coes
Cres
RBSOA
SCSOA
Erec
trr
Irr
Total Gate Charge (turn-on)
––– 18.2 –––
IC = 5.0A
Gate - Emitter Charge (turn-on)
––– 1.9 ––– nC VCC = 400V
CT1
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
––– 9.2 –––
VGE = 15V
––– 110 210 µJ IC = 5.0A, VCC = 400V
CT4
Turn-Off Switching Loss
––– 135 245
VGE = 15V,RG = 100Ω, L =1.4mH
Total Switching Loss
––– 245 455
Ls = 150nH
TJ = 25°C ƒ
Turn-On Delay Time
––– 25 34
IC = 5.0A, VCC = 400V
CT4
Rise Time
––– 17 26
VGE = 15V, RG = 100L =1.4mH
Turn-Off Delay Time
––– 215 230 ns Ls = 150nH, TJ = 25°C
Fall Time
––– 13.2 22
Turn-On Switching Loss
Turn-Off Switching Loss
––– 150 260
IC = 5.0A, VCC = 400V
––– 190 300 µJ VGE = 15V,RG = 100Ω, L =1.4mH
CT4
13,15
Total Switching Loss
––– 340 560
Ls = 150nH
TJ = 150°C ƒ WF1WF2
Turn-On Delay Time
––– 28 37
IC = 5.0A, VCC = 400V
14, 16
Rise Time
––– 17 26
VGE = 15V, RG = 100L =1.4mH
CT4
Turn-Off Delay Time
––– 240 255 ns Ls = 150nH, TJ = 150°C
WF1
Fall Time
––– 18 27
WF2
Input Capacitance
––– 290 –––
VGE = 0V
Output Capacitance
––– 34 ––– pF VCC = 30V
Reverse Transfer Capacitance
––– 10 –––
f = 1.0MHz
Reverse Bias Safe Operting Area
FULL SQUARE
TJ = 150°C, IC = 26A, Vp =600V
4
VCC = 500V, VGE = +15V to 0V,RG = 100CT2
Short Circuit Safe Operting Area
10
––– –––
µs
TJ = 150°C, Vp =600V, RG = 100
VCC = 360V, VGE = +15V to 0V
CT3
WF4
Reverse Recovery energy of the diode ––– 90 175 µJ TJ = 150°C
Diode Reverse Recovery time
––– 70 80 ns VCC = 400V, IF = 5.0A, L = 1.4mH
17,18,19
20, 21
Diode Peak Reverse Recovery Current ––– 10 14 A VGE = 15V,RG = 100Ω, Ls = 150nH CT4,WF3
Note:  to „ are on page 15
2
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