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IXGR50N60BD1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HiPerFAST IGBT ISOPLUS247 - IXYS Corporation

भाग संख्या IXGR50N60BD1
समारोह HiPerFAST IGBT ISOPLUS247
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGR50N60BD1?> डेटा पत्रक पीडीएफ

IXGR50N60BD1 pdf
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
PICu=lseITt;eVsCt,E
= 10 V,
t 300
µs,
duty
cycle
2
%
25
35
S
VCE = 25 V, VGE = 0 V, f = 1 MHz
4100
300
50
pF
pF
pF
pF
IC = IT, VGE = 15 V, VCE = 0.5 VCES
110 nC
30 nC
35 nC
Inductive load, TJ = 25°C
IC = IT, VGE = 15 V, L = 100uH
VCE = 0.8 • VCES, RG = Roff = 2.7
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
50
50
110 270
85 150
ns
ns
ns
ns
3.0 4.0 mJ
Inductive load, TJ = 125°C
IC = IT, VGE = 15 V, L = 100uH
VCE = 0.8 • VCES, RG = Roff = 2.7
Remarks: Switching times may
increase for
higher TJ or
VinCcEre(CaslaemdpR) G>
0.8
VCES,
50
60
3
200
250
4.2
ns
ns
mJ
ns
ns
mJ
0.15
0.5 K/W
K/W
IXGR 50N60B
IXGR 50N60BD1
ISOPLUS 247 OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IRM
trr
RthJC
IF = IT, VGE = 0 V,
TJ = 150°C
Pulse test, t 300 ms, duty cycle 2 %
1.6 V
2.5 V
IF = IT, VGE = 0 V, -diF/dt = 100 A/ms,TJ = 100°C
VR = 100 V
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
3.2
35
A
ns
ns
0.85 K/W
Note: IT,= 50A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481
one or moreof the following U.S. patents:
4,850,072 5,017,508 5,063,307 5,381,025
4,881,106 5,034,796 5,187,117 5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585

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डाउनलोड[ IXGR50N60BD1 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGR50N60BD1HiPerFAST IGBT ISOPLUS247IXYS Corporation
IXYS Corporation


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