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IXGR32N60CD1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HiPerFAST IGBT - IXYS Corporation

भाग संख्या IXGR32N60CD1
समारोह HiPerFAST IGBT
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGR32N60CD1?> डेटा पत्रक पीडीएफ

IXGR32N60CD1 pdf
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IT; VCE = 10 V,
Pulse test, t 300 µs, duty cycle 2 %
25 S
2700
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
240 pF
50 pF
IC = IT, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IT, VGE = 15 V, L = 100 µH,
VCE = 0.8 VCES, RG = Roff = 4.7
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Inductive load, TJ = 125°C
IC = IT, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = Roff = 4.7
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
110
22
40
25
20
85
55
0.32
25
25
1
110
100
0.85
nC
nC
nC
ns
ns
170 ns
ns
0.75 mJ
ns
ns
mJ
ns
ns
mJ
0.90 K/W
0.15
K/W
IXGR 32N60CD1
ISOPLUS 247 OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IRM
trr
RthJC
IF = IT, VGE = 0 V, Pulse test
t 300 µs, duty cycle d 2 %
TJ = 150°C
TJ = 25°C
IF = IT, VGE = 0 V, -diF/dt = 100 A/µs
VR = 100 V
TJ = 100°C
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 25°C
6
100
25
1.6 V
2.5 V
A
ns
ns
1.15 K/W
Note: 1. IT = 32A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585

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डाउनलोड[ IXGR32N60CD1 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGR32N60CD1HiPerFAST IGBTIXYS Corporation
IXYS Corporation


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