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UPA895TD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN SILICON RF TWIN TRANSISTOR - CEL

भाग संख्या UPA895TD
समारोह NPN SILICON RF TWIN TRANSISTOR
मैन्युफैक्चरर्स CEL 
लोगो CEL लोगो 
पूर्व दर्शन
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<?=UPA895TD?> डेटा पत्रक पीडीएफ

UPA895TD pdf
UPA895TD
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
Q1 Q2
VCBO Collector to Base Voltage V
99
VCEO Collector to Emitter Voltage V
5.5 5.5
VEBO Emitter to Base Voltage
V 1.5 1.5
IC Collector Current
mA 100 100
PT Total Power Dissipation2 mW 190 for 1 element
210 for 2 elements
TJ Junction Temperature
°C 150 150
TSTG Storage Temperature
°C -65 to +150
Note: 1. Operation in excess of any one of these parameters may
result in permanent damage.
2. Mounted on 1.08cm2 x 1.0 mm(t) glass epoxy substrate.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
300
Mounted on Glass Epoxy PCB
(1.08 cm2 x 1.0 mm (t) )
250
210 2 Elements
200
190
180
150
100
1 Element
50
0
25 50 75 100 125 150
Ambient Temperature, TA (°C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
10
1
0.1
0.01
0.001
0.0001
0.4
0.5 0.6 0.7 0.8 0.9
Base to Emitter Voltage, VBE (V)
1.0
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
VCE = 2 V
f = 2 GHz
5
18
15
4 12
Ga
39
26
NF
13
00
1 10 100
Collector Current, IC (mA)
REVERSE TRANSFR CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
1.0
f = 1 MHz
0.8
0.6
0.4
0.2
0
2 4 6 8 10
Collector to Base Voltage, VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 2 V
10
1
0.1
0.01
0.001
0.0001
0.4
0.5 0.6 0.7 0.8 0.9
Base to Emitter Voltage, VBE (V)
1.0

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डाउनलोड[ UPA895TD Datasheet.PDF ]


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