DataSheet.in

IRG4PH20KD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4PH20KD
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=IRG4PH20KD?> डेटा पत्रक पीडीएफ

IRG4PH20KD pdf
IRG4PH20KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
VFM
IGES
Collector-to-Emitter Breakdown Voltageƒ
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance „
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
1200
3.5
2.3
—— V
1.13 — V/°C
3.17 4.3
4.04 — V
2.84 —
— 6.5
-10 — mV/°C
3.5 — S
— 250 µA
— 1000
2.5 2.9 V
2.2 2.6
— ±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 2.5mA
IC = 5.0A
VGE = 15V
IC = 11A
See Fig. 2, 5
IC = 5.0A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 1mA
VCE = 100V, IC = 5.0A
VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 150°C
IC = 5.0A
See Fig. 13
IC = 5.0A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
2
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min.
10
Typ.
28
4.4
12
50
30
100
250
0.62
0.30
0.92
50
30
110
620
1.6
13
435
44
8.3
51
68
6.0
7.0
183
285
380
307
Max.
43
6.6
18
150
380
1.2
77
102
9.0
11
274
427
Units
nC
ns
mJ
µs
ns
mJ
nH
pF
ns
A
nC
A/µs
Conditions
IC = 5.0A
VCC = 400V
See Fig.8
VGE = 15V
TJ = 25°C
IC = 5.0A, VCC = 800V
VGE = 15V, RG = 50
Energy losses include "tail"
and diode reverse recovery
See Fig. 9,10,18
VCC = 720V, TJ = 125°C
VGE = 15V, RG = 50
TJ = 150°C, See Fig. 10,11,18
IC = 5.0A, VCC = 800V
VGE = 15V, RG = 50,
Energy losses include "tail"
and diode reverse recovery
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
TJ = 25°C See Fig.
TJ = 125°C 14
IF = 5.0A
TJ = 25°C See Fig.
TJ = 125°C 15
VR = 200V
TJ = 25°C See Fig.
TJ = 125°C
16 di/dt = 200A/µs
TJ = 25°C See Fig.
TJ = 125°C 17
www.irf.com

विन्यास 10 पेज
डाउनलोड[ IRG4PH20KD Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRG4PH20KINSULATED GATE BIPOLAR TRANSISTORInternational Rectifier
International Rectifier
IRG4PH20KDINSULATED GATE BIPOLAR TRANSISTORInternational Rectifier
International Rectifier


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English