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IRG4PH20K डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4PH20K
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRG4PH20K?> डेटा पत्रक पीडीएफ

IRG4PH20K pdf
IRG4PH20K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 1200 —
V(BR)ECS
Emitter-to-Collector Breakdown Voltage „ 18 —
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 1.13
— 3.17
4.3
V
V
V/°C
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 2.5mA
IC = 5.0A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance …
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
— 4.04 — V IC = 11A
See Fig.2, 5
— 2.84 —
IC = 5.0A , TJ = 150°C
3.5 — 6.5
VCE = VGE, IC = 250µA
— -10 — mV/°C VCE = VGE, IC = 1mA
2.3 3.5 — S VCE = 100 V, IC = 5.0A
— — 250 µA VGE = 0V, VCE = 1200V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000
VGE = 0V, VCE = 1200V, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 28 43
IC = 5.0A
— 4.4 6.6 nC VCC = 400V
See Fig.8
— 12 18
VGE = 15V
— 23 —
— 26 — ns TJ = 25°C
— 93 140
IC =5.0A, VCC = 960V
— 270 400
VGE = 15V, RG = 50
— 0.45 —
Energy losses include "tail"
— 0.44 — mJ See Fig. 9,10,14
— 0.89 1.2
10 — —
µs VCC = 720V, TJ = 125°C
VGE = 15V, RG = 50
— 23 —
TJ = 150°C,
— 28 —
— 100 —
ns
IC = 5.0A, VCC = 960
VGE = 15V, RG = 50
— 620 —
Energy losses include "tail"
— 1.7 — mJ See Fig. 10,11,14
— 13 — nH Measured 5mm from package
— 435 —
VGE = 0V
— 44 — pF VCC = 30V
See Fig. 7
— 8.3 —
ƒ = 1.0MHz
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG =50,
(See fig. 13a)
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
„ Pulse width 80µs; duty factor 0.1%.
… Pulse width 5.0µs, single shot.
2 www.irf.com

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