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IRG4BC30FPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4BC30FPBF
समारोह Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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<?=IRG4BC30FPBF?> डेटा पत्रक पीडीएफ

IRG4BC30FPBF pdf
IRG4BC30FPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
V(BR)CES/TJ
VCE(ON)
VGE(th)
VGE(th)/TJ
gfe
ICES
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage „
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance …
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Min.
600
18
—
—
—
—
3.0
—
6.1
—
—
—
—
Typ. Max. Units
—— V
—— V
0.69 — V/°C
1.59 1.8
1.99 —
1.7 —
V
— 6.0
-11 — mV/°C
10 — S
— 250 µA
— 2.0
— 1000
— ±100 n A
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 17A
VGE = 15V
IC = 31A
See Fig.2, 5
IC = 17A , TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 17A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 51 77
IC = 17A
— 7.9 12
— 19 28
nC VCC = 400V
VGE = 15V
See Fig. 8
— 21 —
— 15 — ns TJ = 25°C
— 200 300
IC = 17A, VCC = 480V
— 180 270
VGE = 15V, RG = 23
— 0.23 —
Energy losses include "tail"
— 1.18 — mJ See Fig. 10, 11, 13, 14
— 1.41 2.0
— 20 —
TJ = 150°C,
— 16 —
— 290 —
ns IC = 17A, VCC = 480V
VGE = 15V, RG = 23
— 350 —
Energy losses include "tail"
— 2.5 — mJ See Fig. 13, 14
— 7.5 — nH Measured 5mm from package
— 1100 —
VGE = 0V
— 74 —
— 14 —
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23,
(See fig. 13a)
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
2
„ Pulse width 80µs; duty factor 0.1%.
… Pulse width 5.0µs, single shot.
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