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IRG4BC40SPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4BC40SPBF
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRG4BC40SPBF?> डेटा पत्रक पीडीएफ

IRG4BC40SPBF pdf
IRG4BC40SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — —
V(BR)ECS
Emitter-to-Collector Breakdown Voltage T 18 — —
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.75 —
— 1.32 1.5
V
V
V/°C
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 31A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ Temperature Coeff. of Threshold Voltage
— 1.68 — V IC = 60A
See Fig.2, 5
— 1.32 —
IC = 31A , TJ = 150°C
3.0 — 6.0
VCE = VGE, IC = 250µA
— -9.3 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance U
12 21 —
S VCE = 100V, IC = 31A
ICES
Zero Gate Voltage Collector Current
— — 250 µ A VGE = 0V, VCE = 600V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
IGES Gate-to-Emitter Leakage Current
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
— — ±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 100 150
IC = 31A
— 14 21 nC VCC = 400V
See Fig. 8
— 34 51
VGE = 15V
— 22 —
— 18 —
ns TJ = 25°C
— 650 980
IC = 31A, VCC = 480V
— 380 570
VGE = 15V, RG = 10
— 0.45 —
Energy losses include "tail"
— 6.5 — mJ See Fig. 10, 11, 13, 14
— 6.95 9.9
— 23 —
TJ = 150°C,
— 21 —
— 1000 —
ns IC = 31A, VCC = 480V
VGE = 15V, RG = 10
— 940 —
Energy losses include "tail"
— 12 — mJ See Fig. 13, 14
— 7.5 — nH Measured 5mm from package
— 2200 —
VGE = 0V
— 140 — pF VCC = 30V
See Fig. 7
— 26 —
ƒ = 1.0MHz
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10,
(See fig. 13a)
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum
junction temperature.
2 www.irf.com

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