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IRG4BC30FD1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4BC30FD1
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRG4BC30FD1 pdf
IRG4BC30FD1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
Parameter
Min. Typ. Max. Units
Conditions
eCollector-to-Emitter Breakdown Voltage
600 — — V VGE = 0V, IC = 250µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.69 — V/°C VGE = 0V, IC = 1mA
— 1.59 1.8
IC = 17A
VGE = 15V
VCE(on)
Collector-to-Emitter Voltage
— 1.99 — V IC = 31A
See Fig. 2, 5
— 1.7 —
IC = 17A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 — 6.0 V VCE = VGE, IC = 250µA
VGE(th)/TJ Threshold Voltage temp. coefficient
fgfe Forward Transconductance
— -11
6.1 10
— mV/°C VCE = VGE, IC = 250µA
— S VCE = 100V, IC = 17A
ICES
Zero Gate Voltage Collector Current
— — 250 µA VGE = 0V, VCE = 600V
— — 2500
VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop
— 2.0 2.4 V IF = 8.0A
See Fig. 13
— 1.3 1.8
IF = 8.0A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge (turn-on)
— 57 62
IC = 17A
Qge Gate-to-Emitter Charge (turn-on)
— 10 12 nC VCC = 400V
See Fig. 8
Qgc
Gate-to-Collector Charge (turn-on)
— 21 24
VGE = 15V
td(on)
Turn-On delay time
— 22 —
TJ = 25°C
tr Rise time
— 24 — ns IC = 17A, VCC = 480V
td(off)
Turn-Off delay time
— 250 320
VGE = 15V, RG = 23
tf Fall time
— 160 210
Energy losses inlcude "tail" and
Eon Turn-On Switching Loss
— 370 —
diode reverse recovery.
Eoff Turn-Off Switching Loss
— 1420 — µJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss
— 1800 2290
td(on)
Turn-On delay time
— 21 —
TJ = 150°C
See Fig. 9,10,11,18
tr Rise time
— 25 — ns IC = 17A, VCC = 480V
td(off)
Turn-Off delay time
— 400 —
VGE = 15V, RG = 23
tf Fall time
— 340 —
Energy losses inlcude "tail" and
Ets Total Switching Loss
— 3280 — µJ diode reverse recovery.
LE Internal Emitter Inductance
— 7.5 — nH Measured 5mm from package
Cies Input Capacitance
— 1170 —
VGE = 0V
Coes Output Capacitance
— 100 — pF VCC = 30V
See Fig. 7
Cres Reverse Transfer Capacitance
— 11 —
f = 1.0MHz
trr Diode Reverse Recovery Time
— 46 61 ns TJ = 25°C See Fig.
— 85 93
TJ = 125°C 14
IF = 12A
Irr
Diode Peak Reverse Recovery Current
— 4.8 6.5 A TJ = 25°C See Fig.
— 8.5 10
TJ = 125°C 15
VR = 200V
Qrr Diode Reverse Recovery Charge
— 110 190 nC TJ = 25°C See Fig.
410 550
TJ = 125°C 16
di/dt 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
— 260 — A/µs TJ = 25°C See Fig.
During tb
— 270 —
TJ = 125°C 17
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