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IRGS8B60KPbF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRGS8B60KPbF
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRGS8B60KPbF pdf
IRGB/S/SL8B60KPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.57 — V/°C VGE = 0V, IC = 1mA (25°C-150°C)
VCE(on)
Collector-to-Emitter Voltage
— 1.8 2.2
IC = 8.0A, VGE = 15V, TJ = 25°C
— 2.2 2.5 V IC = 8.0A, VGE = 15V, TJ = 150°C
— 2.3 2.6
IC = 8.0A, VGE = 15V, TJ = 175°C
VGE(th)
Gate Threshold Voltage
3.5 4.5 5.5
VCE = VGE, IC = 250µA
VGE(th)/TJ Threshold Voltage temp. coefficient
— -9.5 — mV/°C VCE = VGE, IC = 1mA (25°C-125°C)
gfe Forward Transconductance
— 3.7 — S VCE = 50V, IC = 8.0A, PW = 80µs
ICES
Zero Gate Voltage Collector Current
— 1.0 150
VGE = 0V, VCE = 600V
— 200 500 µA VGE = 0V, VCE = 600V, TJ = 150°C
— 800 1320
VGE = 0V, VCE = 600V, TJ = 175°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Ref.Fig.
5,6,7
8,9,10
8,9,10,
11
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
Qg Total Gate Charge (turn-on)
— 29 —
IC = 8.0A
17
Qge Gate-to-Emitter Charge (turn-on)
— 3.7 — nC VCC = 480V
CT1
Qgc
Gate-to-Collector Charge (turn-on)
— 14 —
VGE = 15V
Eon Turn-On Switching Loss
— 160 268
IC = 8.0A, VCC = 400V
CT4
Eoff Turn-Off Switching Loss
Etot Total Switching Loss
f— 160 268 µJ VGE = 15V, RG = 50, L = 1.1mH
— 320 433
TJ = 25°C
td(on) Turn-On delay time
— 23 27
IC = 8.0A, VCC = 400V
tr Rise time
— 22 26 ns VGE = 15V, RG = 50, L = 1.1mH
CT4
td(off)
Turn-Off delay time
— 140 150
TJ = 25°C
tf Fall time
— 32 42
Eon Turn-On Switching Loss
— 220 330
IC = 8.0A, VCC = 400V
CT4
Eoff Turn-Off Switching Loss
Etot Total Switching Loss
f— 270 381 µJ VGE = 15V, RG = 50, L = 1.1mH
— 490 608
TJ = 150°C
12,14
WF1,WF2
td(on) Turn-On delay time
— 22 27
IC = 8.0A, VCC = 400V
13,15
tr Rise time
— 21 25 ns VGE = 15V, RG = 50, L = 1.1mH
CT4
td(off)
Turn-Off delay time
— 180 198
TJ = 150°C
WF1
tf Fall time
— 40 56
WF2
Cies Input Capacitance
— 440 —
VGE = 0V
Coes Output Capacitance
— 38 — pF VCC = 30V
16
Cres Reverse Transfer Capacitance
— 16 —
f = 1.0MHz
RBSOA Reverse Bias Safe Operating Area
FULL SQUARE
TJ = 150°C, IC = 34A, Vp = 600V
4
VCC=500V,VGE = +15V to 0V,RG = 50CT2
TJ = 150°C, Vp = 600V, RG = 100
CT3
SCSOA Short Circuit Safe Operating Area
10 — — µs VCC=360V,VGE = +15V to 0V
WF3
Notes  to „ are on page 13.
2
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