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IRGS15B60KDPbF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRGS15B60KDPbF
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRGS15B60KDPbF?> डेटा पत्रक पीडीएफ

IRGS15B60KDPbF pdf
IRGB/S/SL15B60KDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
VFM
IGES
Collector-to-Emitter Breakdown Voltage 600
Temperature Coeff. of Breakdown Voltage –––
Collector-to-Emitter Saturation Voltage 1.5
–––
–––
Gate Threshold Voltage
3.5
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
–––
Zero Gate Voltage Collector Current
–––
–––
Diode Forward Voltage Drop
–––
–––
Gate-to-Emitter Leakage Current
–––
––– ––– V
0.3 ––– V/°C
1.80 2.20
2.05 2.50 V
2.10 2.60
4.5 5.5 V
-10 ––– mV/°C
10.6 ––– S
5.0 150 µA
500 1000
1.20 1.45
1.20 1.45 V
––– ±100 nA
VGE = 0V, IC = 500µA
VGE = 0V, IC = 1.0mA, (25°C-150°C)
IC = 15A, VGE = 15V
5, 6,7
IC = 15A, VGE = 15V TJ = 125°C 9, 10,11
IC = 15A, VGE = 15V TJ = 150°C
VCE = VGE, IC = 250µA
9, 10,11
VCE = VGE, IC = 1.0mA, (25°C-150°C) 12
VCE = 50V, IC = 20A, PW=80µs
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 15A
8
IC = 15A TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
Qg
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Cies
Coes
Cres
RBSOA
SCSOA
Erec
trr
Irr
Total Gate Charge (turn-on)
––– 56 84
IC = 15A
Gate - Emitter Charge (turn-on)
––– 7.0 10 nC VCC = 400V
CT1
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
––– 26 39
––– 220 330
VGE = 15V
µJ IC = 15A, VCC = 400V
CT4
Turn-Off Switching Loss
––– 340 455
VGE = 15V,RG = 22Ω, L = 200µH
Total Switching Loss
––– 560 785
Ls = 150nH
TJ = 25°C ƒ
Turn-On Delay Time
––– 34 44
IC = 15A, VCC = 400V
Rise Time
––– 16 22
VGE = 15V, RG = 22Ω, L = 200µH
CT4
Turn-Off Delay Time
––– 184 200 ns Ls = 150nH, TJ = 25°C
Fall Time
––– 20 26
Turn-On Switching Loss
––– 355 470
IC = 15A, VCC = 400V
CT4
Turn-Off Switching Loss
––– 490 600 µJ VGE = 15V,RG = 22Ω, L = 200µH
13,15
Total Switching Loss
––– 835 1070
Ls = 150nH
TJ = 150°C ƒ WF1WF2
Turn-On Delay Time
––– 34 44
IC = 15A, VCC = 400V
14, 16
Rise Time
––– 18 25
VGE = 15V, RG = 22Ω, L = 200µH
CT4
Turn-Off Delay Time
––– 203 226 ns Ls = 150nH, TJ = 150°C
WF1
Fall Time
––– 28 36
WF2
Input Capacitance
––– 850 –––
VGE = 0V
Output Capacitance
––– 75 ––– pF VCC = 30V
Reverse Transfer Capacitance
––– 35 –––
f = 1.0MHz
Reverse Bias Safe Operting Area
FULL SQUARE
TJ = 150°C, IC = 62A, Vp =600V
4
VCC = 500V, VGE = +15V to 0V,RG = 22CT2
Short Circuit Safe Operting Area
10
––– –––
µs
TJ = 150°C, Vp =600V,RG = 22
VCC = 360V, VGE = +15V to 0V
CT3
WF4
Reverse Recovery energy of the diode ––– 540 720 µJ TJ = 150°C
17,18,19
Diode Reverse Recovery time
––– 92 111 ns VCC = 400V, IF = 15A, L = 200µH
20,21
Diode Peak Reverse Recovery Current ––– 29 33
A VGE = 15V,RG = 22Ω, Ls = 150nH
CT4,WF3
Note  to „ are on page 15
2
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