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IRG4PSH71U डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4PSH71U
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRG4PSH71U pdf
IRG4PSH71U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
Parameter
Min. Typ. Max. Units Conditions
Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA
V(BR)ECS
Emitter-to-Collector Breakdown Voltage
19 — — V VGE = 0V, IC = 1.0A
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.78 — V/°C VGE = 0V, IC = 1mA
— 2.52 2.70 V IC = 70A
VGE = 15V
VCE(on)
Collector-to-Emitter Saturation Voltage
— 3.17 —
IC = 140A
See Fig.2, 5
— 2.68 —
IC = 70A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 — 6.0
VCE = VGE, IC = 250µA
VGE(th)/TJ Threshold Voltage temp. coefficient
fgfe Forward Transconductance
— -9.2 — mV/°C VCE = VGE, IC = 1.0mA
48 72 — S VCE = 100V, IC = 70A
ICES
Zero Gate Voltage Collector Current
— — 500 µA VGE = 0V, VCE = 1200V
— — 2.0
VGE = 0V, VCE = 10V
— — 5000
VGE = 0V, VCE = 1200V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on)
— 370 560
IC = 70A
Qge Gate-to-Emitter Charge (turn-on)
— 61 24 nC VCC = 400V
See Fig.8
Qgc
Gate-to-Collector Charge (turn-on)
— 120 50
VGE = 15V
td(on)
Turn-On delay time
— 51 —
IC = 70A, VCC = 960V
tr Rise time
— 70 — ns VGE = 15V, RG = 5.0
td(off)
Turn-Off delay time
— 280 390
Energy losses include "tail"
tf Fall time
— 170 260
See Fig. 9, 10, 11, 14
Eon Turn-On Switching Loss
— 4.77 —
Eoff Turn-Off Switching Loss
— 9.54 — mJ
Etot Total Switching Loss
— 14.3 15.8
td(on)
Turn-On delay time
— 49 —
TJ = 150°C, See Fig. 9, 10, 11, 14
tr Rise time
— 70 — ns IC = 70A, VCC = 960V
td(off)
Turn-Off delay time
— 390 —
VGE = 15V, RG = 5.0
tf Fall time
— 360 —
Energy losses include "tail"
ETS Total Switching Loss
— 25 — mJ
LE Internal Emitter Inductance
— 13 — nH Measured 5mm from package
Cies Input Capacitance
— 7280 —
VGE = 0V
Coes Output Capacitance
— 290 — pF VCC = 30V, See Fig.7
Cres Reverse Transfer Capacitance
— 50 —
f = 1.0MHz
Notes:
 Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
‚ VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0 (figure 13a)
ƒ Pulse width 80µs; duty factor 0.1%.
„ Pulse width 5.0µs, single shot.
… Repetitive rating; pulse width limited by maximumjunction temperature.
2 www.irf.com

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