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IRG4PSH71KD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4PSH71KD
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRG4PSH71KD pdf
IRG4PSH71KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
VFM
IGES
Collector-to-Emitter Breakdown Voltageƒ
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance „
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
1200
3.0
25
1.1
2.97
3.44
2.60
-12
38
2.5
2.4
—V
— V/°C
3.9
—V
6.0
— mV/°C
—S
500 µA
10 mA
3.7 V
±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 10mA
IC = 42A
VGE = 15V
IC = 78A
See Fig. 2, 5
IC = 42A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 1.5mA
VCE = 50V, IC = 42A
VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 150°C
IC = 42A
See Fig. 13
IC = 42A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
2
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
— 410 610
IC = 42A
— 47 70 nC VCC = 400V
— 145 220
VGE = 15V
See Fig.8
— 67 —
— 84 — ns TJ = 25°C
— 230 350
IC = 42A, VCC = 800V
— 130 190
VGE = 15V, RG = 5.0
— 5.68 —
Energy losses include "tail"
— 3.23 — mJ and diode reverse recovery
— 8.90 11.6
See Fig. 9,10,18
10 — —
— 65 —
µs VCC = 720V, TJ = 125°C
VGE = 15V, RG = 5.0
TJ = 150°C,
See Fig. 11,18
— 87 —
— 370 —
ns IC = 42A, VCC = 800V
VGE = 15V, RG = 5.0
— 290 —
Energy losses include "tail"
— 13.7 — mJ and diode reverse recovery
— 13 — nH Measured 5mm from package
— 5770 —
VGE = 0V
— 400 —
— 100 —
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
— 107 160
— 160 240
ns TJ = 25°C See Fig.
TJ = 125°C 14
IF = 42A
— 10 15
— 16 24
A TJ = 25°C See Fig.
TJ = 125°C 15
VR = 200V
— 680 1020 nC TJ = 25°C See Fig.
— 1400 2100
TJ = 125°C
16 di/dt = 200A/µs
— 250 — A/µs TJ = 25°C See Fig.
— 320 —
TJ = 125°C 17
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