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IRG4PSH71K डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4PSH71K
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRG4PSH71K pdf
IRG4PSH71K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)ECS
V(BR)CES/TJ
Collector-to-Emitter Breakdown Voltage 1200
Emitter-to-Collector Breakdown Voltage  18
Temperature Coeff. of Breakdown Voltage –––
–––
–––
–––
1.1
2.97
–––
–––
–––
3.9
V
V
V/°C
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 10mA
IC = 42A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance 
––– 3.44
––– 2.60
3.0 –––
––– -12
25 38
––– V
–––
IC = 78A
IC = 42A , TJ = 150°C
6.0 VCE = VGE, IC = 250µA
––– mV/°C VCE = VGE, IC = 1.5mA
––– S VCE = 50V, IC = 42A
See Fig.2, 5
ICES
Zero Gate Voltage Collector Current
––– ––– 500 µA VGE = 0V, VCE = 1200V
––– ––– 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
IGES Gate-to-Emitter Leakage Current
––– ––– 5.0 mA VGE = 0V, VCE = 1200V, TJ = 150°C
––– ––– ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge (turn-on)
Qge Gate - Emitter Charge (turn-on)
— 410 610
IC = 42A
— 47 70 nC VCC = 400V
See Fig.8
Qgc
td(on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
— 145 220
— 45 —
VGE = 15V
tr
td(off)
tf
Eon
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
— 38 — ns TJ = 25°C
— 220 340
IC = 42A, VCC = 960V
— 160 250
VGE = 15V, RG = 5.0
— 2.35 —
Energy losses include "tail"
Eoff Turn-Off Switching Loss
Ets Total Switching Loss
— 3.14 — mJ See Fig. 9,10,14
— 5.49 8.3
tsc Short Circuit Withstand Time
10 — —
µs VCC = 720V, TJ = 125°C
VGE = 20V, RG = 5.0
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
— 42 —
— 41 —
— 460 —
— 250 —
TJ = 150°C
ns IC = 42A, VCC = 960V
VGE = 15V, RG = 5.0
Energy losses include "tail"
Ets Total Switching Loss
LE Internal Emitter Inductance
— 11.5 —
— 13 —
mJ See Fig. 10,11,14
nH Measured 5mm from package
Cies Input Capacitance
Coes Output Capacitance
— 5770 —
— 400 —
VGE = 0V
pF VCC = 30V
See Fig. 7
Cres Reverse Transfer Capacitance
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0,
(See fig. 13a)
— 100 —
ƒ = 1.0MHz
„ Pulse width 80µs; duty factor 0.1%
… Pulse width 5.0µs, single shot
ƒ Repetitive rating; pulse width limited by maximum
junction temperature
2
www.irf.com

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