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IRG4PSC71U डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4PSC71U
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRG4PSC71U?> डेटा पत्रक पीडीएफ

IRG4PSC71U pdf
IRG4PSC71U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)ECS
V(BR)CES/TJ
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage 
Temperature Coeff. of Breakdown Voltage
600
18
–––
–––
VCE(ON)
Collector-to-Emitter Saturation Voltage
–––
–––
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance 
ICES Zero Gate Voltage Collector Current
3.0
–––
47
–––
–––
–––
IGES Gate-to-Emitter Leakage Current
–––
–––
–––
0.45
1.67
1.95
1.71
–––
-10
70
–––
–––
–––
–––
–––
–––
–––
2.0
–––
–––
6.0
–––
–––
500
2.0
5.0
±100
V
V
V/°C
V
mV/°C
S
µA
mA
nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 5.0mA
IC = 60A
VGE = 15V
IC = 100A
See Fig.2, 5
IC = 60A , TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 1.0mA
VCE = 50V, IC = 60A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
––– 340 520
IC = 60A
––– 44 66 nC VCC = 400V
––– 160 240
VGE = 15V
See Fig. 8
––– 34 –––
––– 50 ––– ns TJ = 25°C
––– 56 84
IC = 60A, VCC = 480V
––– 86 130
VGE = 15V, RG = 5.0
––– 0.42 –––
Energy losses include "tail"
––– 1.99 ––– mJ See Fig. 10, 11, 13, 14
––– 2.41 3.2
––– 30 –––
TJ = 150°C,
––– 49 ––– ns IC = 60A, VCC = 480V
––– 129 –––
VGE = 15V, RG = 5.0
––– 175 –––
Energy losses include "tail"
––– 4.5 ––– mJ See Fig. 13, 14
––– 13 ––– nH Measured 5mm from package
––– 7500 –––
VGE = 0V
––– 720 ––– pF VCC = 30V
––– 93 –––
ƒ = 1.0MHz
See Fig. 7
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0,
(See fig. 13a)
„ Pulse width 80µs; duty factor 0.1%.
… Pulse width 5.0µs, single shot.
† Current limited by the package, (Die current = 100A)
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
2
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