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IRG4PC50KPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4PC50KPBF
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRG4PC50KPBF pdf
IRG4PC50KPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)CES
Collector-to-Emitter Breakdown Voltage
V(BR)ECS
Emitter-to-Collector Breakdown Voltage „
V(BR)CES/TJ TemperatureCoeff.ofBreakdownVoltage
VCE(ON)
Collector-to-EmitterSaturation Voltage
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ TemperatureCoeff.ofThresholdVoltage
gfe Forward Transconductance …
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
Min. Typ. Max. Units
Conditions
600 —
18 —
—
—
V VGE = 0V, IC = 250µA
V VGE = 0V, IC = 1.0A
— 0.47 — V/°C VGE = 0V, IC = 1.0mA
— 1.84 2.2
IC = 30A
VGE = 15V
— 2.19 — V IC = 52A
See Fig.2, 5
— 1.79 —
IC = 30A , TJ = 150°C
3.0 — 6.0
VCE = VGE, IC = 250µA
— -12 — mV/°C VCE = VGE, IC = 250µA
17 24 — S VCE = 100 V, IC = 30A
— — 250 µA VGE = 0V, VCE = 600V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 5000
VGE = 0V, VCE = 600V, TJ = 150°C
— — ±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
10
—
—
—
—
—
—
—
—
—
Typ. Max.
200 300
25 38
85 130
38 —
34 —
160 240
79 120
0.49 —
0.68 —
1.12 1.4
——
37
35
260
170
2.34
13
3200
370
95
—
—
—
—
—
—
—
—
—
Units
nC
ns
mJ
µs
ns
mJ
nH
pF
Conditions
IC = 30A
VCC = 400V
See Fig.8
VGE = 15V
TJ = 25°C
IC = 30A, VCC = 480V
VGE = 15V, RG = 5.0
Energy losses include "tail"
See Fig. 9,10,14
VCC = 400V, TJ = 125°C
VGE = 15V, RG = 10, VCPK < 500V
TJ = 150°C,
IC = 30A, VCC = 480V
VGE = 15V, RG = 5.0
Energy losses include "tail"
See Fig. 11,14
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
„ Pulse width 80µs; duty factor 0.1%.
… Pulse width 5.0µs, single shot.
2 www.irf.com

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