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IRG4PC40UPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4PC40UPBF
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRG4PC40UPBF pdf
IRG4PC40UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage 600
Emitter-to-Collector Breakdown Voltage T 18
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ----
VCE(on)
Collector-to-Emitter Saturation Voltage ----
----
----
----
----
0.63
1.72
2.15
1.7
----
----
----
2.1
----
----
V
V
V/°C
V
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 20A
IC = 40A
IC = 20A, TJ = 150°C
See Fig. 2, 5
VGE = 15V
VGE(th)
Gate Threshold Voltage
3.0 ---- 6.0
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance U 11 18 ---- S VCE = 100V, IC = 20A
---- ---- 250
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
---- ---- 2.0 µ A VGE = 0V, VCE = 10V, TJ = 25°C
---- ---- 2500
VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
---- 100 150
IC = 20A
---- 16 25
---- 40 60
nC VCC = 400V
VGE = 15V
See Fig. 8
---- 34 ----
---- 19 ----
TJ = 25°C
ns IC = 20A, VCC = 480V
---- 110 175
---- 120 180
VGE = 15V, RG = 10
Energy losses include "tail"
---- 0.32 ----
---- 0.35 ---- mJ See Fig. 10, 11, 13, 14
---- 0.67 1.0
---- 30 ----
TJ = 150°C,
---- 19 ----
---- 220 ----
ns IC = 20A, VCC = 480V
VGE = 15V, RG = 10
---- 160 ----
Energy losses include "tail"
---- 1.4 ---- mJ See Fig. 13, 14
---- 13 ---- nH Measured 5mm from package
---- 2100 ----
VGE = 0V
---- 140 ----
---- 34 ----
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10,
(See fig. 13a)
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum
junction temperature.
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