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IRG4PC30U डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4PC30U
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRG4PC30U pdf
IRG4PC30U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage 600 — —
Emitter-to-Collector Breakdown Voltage T 18 — —
V VGE = 0V, IC = 250µA
V VGE = 0V, IC = 1.0A
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage 0.63 V/°C VGE = 0V, IC = 1.0mA
1.95 2.1
IC = 12A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
2.52 V IC = 23A
See Fig.2, 5
2.09
IC = 12A , TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 6.0
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage -13 mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance U
3.1 8.6 S VCE = 100 V, IC = 12A
ICES
Zero Gate Voltage Collector Current
— — 250 µ A VGE = 0V, VCE = 600V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
50 75
8.1 12
18 27
17
IC = 12A
nC VCC = 400V
VGE = 15V
See Fig.8
9.6 ns TJ = 25°C
78 120
IC = 12A, VCC = 480V
97 150
VGE = 15V, RG = 23
0.16
Energy losses include "tail"
0.20 mJ See Fig. 10, 11, 13, 14
0.36 0.50
20
13
180
140
TJ = 150°C,
ns IC = 12A, VCC = 480V
VGE = 15V, RG = 23
Energy losses include "tail"
0.73 mJ See Fig. 13, 14
13 nH Measured 5mm from package
1100
73
14
VGE = 0V
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
2 www.irf.com

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