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IRG4PC30FD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4PC30FD
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRG4PC30FD?> डेटा पत्रक पीडीएफ

IRG4PC30FD pdf
IRG4PC30FD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
VFM
IGES
Collector-to-Emitter Breakdown VoltageS 600
Temperature Coeff. of Breakdown Voltage –––
Collector-to-Emitter Saturation Voltage –––
–––
–––
Gate Threshold Voltage
3.0
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance T
6.1
Zero Gate Voltage Collector Current –––
–––
Diode Forward Voltage Drop
–––
–––
Gate-to-Emitter Leakage Current
–––
––– ––– V
0.69 ––– V/°C
1.59 1.8
1.99 ––– V
1.70 –––
––– 6.0
-11 ––– mV/°C
10 ––– S
––– 250 µA
––– 2500
1.4 1.7 V
1.3 1.6
––– ±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 17A
VGE = 15V
IC = 31A
See Fig. 2, 5
IC = 17A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 17A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 12A
See Fig. 13
IC = 12A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
––– 51 77
––– 7.9 12
IC = 17A
nC VCC = 400V
See Fig. 8
––– 19 28
––– 42 –––
VGE = 15V
TJ = 25°C
––– 26 ––– ns IC = 17A, VCC = 480V
––– 230 350
VGE = 15V, RG = 23
––– 160 230
Energy losses include "tail" and
––– 0.63 –––
diode reverse recovery.
––– 1.39 ––– mJ See Fig. 9, 10, 11, 18
––– 2.02 3.9
––– 42 –––
TJ = 150°C, See Fig. 9, 10, 11, 18
––– 27 ––– ns IC = 17A, VCC = 480V
––– 310 –––
VGE = 15V, RG = 23
––– 310 –––
Energy losses include "tail" and
––– 3.2 ––– mJ diode reverse recovery.
––– 13 ––– nH Measured 5mm from package
––– 1100 –––
VGE = 0V
––– 74 ––– pF VCC = 30V
See Fig. 7
––– 14 –––
ƒ = 1.0MHz
––– 42 60
––– 80 120
––– 3.5 6.0
ns
A
TJ = 25°C See Fig.
TJ = 125°C 14
TJ = 25°C See Fig.
IF = 12A
––– 5.6 10
TJ = 125°C 15
VR = 200V
––– 80 180
nC
––– 220 600
TJ = 25°C See Fig.
TJ = 125°C
16 di/dt 200A/µs
––– 180 –––
A/µs
TJ = 25°C
See Fig.
––– 120 –––
TJ = 125°C 17
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