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IRG4BC40U डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HEXFET Power MOSFET - International Rectifier

भाग संख्या IRG4BC40U
समारोह HEXFET Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRG4BC40U?> डेटा पत्रक पीडीएफ

IRG4BC40U pdf
IRG4BC40U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600
V(BR)ECS Emitter-to-Collector Breakdown Voltage T 18
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ----
VCE(on)
Collector-to-Emitter Saturation Voltage ----
----
----
VGE(th)
Gate Threshold Voltage
3.0
VGE(th)/TJ Temperature Coeff. of Threshold Voltage ----
gfe Forward Transconductance U 11
----
ICES Zero Gate Voltage Collector Current ----
----
IGES Gate-to-Emitter Leakage Current ----
---- ---- V
---- ---- V
0.63 ---- V/°C
1.72 2.1
2.15 ---- V
1.7 ----
---- 6.0
-13 ---- mV/°C
18 ---- S
---- 250
---- 2.0 µA
---- 2500
---- ±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A See Fig. 2, 5
VGE = 0V, IC = 1.0mA
IC = 20A
VGE = 15V
IC = 40A
IC = 20A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 20A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
---- 100 150
IC = 20A
---- 16 25
---- 40 60
nC VCC = 400V
VGE = 15V
See Fig. 8
---- 34 ----
---- 19 ----
---- 110 175
---- 120 180
TJ = 25°C
ns IC = 20A, VCC = 480V
VGE = 15V, RG = 10
Energy losses include "tail"
---- 0.32 ----
---- 0.35 ---- mJ See Fig. 10, 11, 13, 14
---- 0.67 1.0
---- 30 ----
TJ = 150°C,
---- 19 ----
---- 220 ----
ns IC = 20A, VCC = 480V
VGE = 15V, RG = 10
---- 160 ----
Energy losses include "tail"
---- 1.4 ---- mJ See Fig. 13, 14
---- 7.5 ---- nH Measured 5mm from package
---- 2100 ----
VGE = 0V
---- 140 ----
---- 34 ----
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10,
(see fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
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