DataSheet.in

IRG4BC40F डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HEXFET Power MOSFET - International Rectifier

भाग संख्या IRG4BC40F
समारोह HEXFET Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=IRG4BC40F?> डेटा पत्रक पीडीएफ

IRG4BC40F pdf
IRG4BC40F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage 600 — —
Emitter-to-Collector Breakdown Voltage T 18 — —
V VGE = 0V, IC = 250µA
V VGE = 0V, IC = 1.0A
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage 0.70 V/°C VGE = 0V, IC = 1.0mA
1.50 1.7
IC = 27A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
1.85 V IC = 49A
See Fig.2, 5
1.56
IC = 27A , TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 6.0
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage -12 mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance U
9.2 12 S VCE = 100V, IC = 27A
ICES
Zero Gate Voltage Collector Current
— — 250 µ A VGE = 0V, VCE = 600V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
100 150
IC = 27A
15 23
35 53
nC VCC = 400V
VGE = 15V
See Fig. 8
26
18 ns TJ = 25°C
240 360
IC = 27A, VCC = 480V
170 250
VGE = 15V, RG = 10
0.37
Energy losses include "tail"
1.81 mJ See Fig. 10, 11, 13, 14
2.18 2.8
25
TJ = 150°C,
21
380
ns IC = 27A, VCC = 480V
VGE = 15V, RG = 10
310
Energy losses include "tail"
3.9 mJ See Fig. 13, 14
7.5 nH Measured 5mm from package
2200
VGE = 0V
140
29
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
2 www.irf.com

विन्यास 8 पेज
डाउनलोड[ IRG4BC40F Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRG4BC40FHEXFET Power MOSFETInternational Rectifier
International Rectifier
IRG4BC40FPBFHEXFET Power MOSFETInternational Rectifier
International Rectifier


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English