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IRFI540NPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HEXFET Power MOSFET - International Rectifier

भाग संख्या IRFI540NPBF
समारोह HEXFET Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRFI540NPBF?> डेटा पत्रक पीडीएफ

IRFI540NPBF pdf
IRFI540NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
C Drain to Sink Capacitance
Min.
100
–––
–––
2.0
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––––––
–––
–––
–––
–––
Typ. Max.
––– –––
0.11 –––
––– 0.052
––– 4.0
––– –––
––– 25
––– 250
––– 100
––– -100
––– 94
––– 15
––– 43
8.2 –––
39 –––
44 –––
33 –––
4.5 –––
7.5 ––––––
1400
330
170
12
–––
–––
–––
–––
Units
V
V/°C
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA†
VGS = 10V, ID = 11A „
VDS = VGS, ID = 250µA
VDS = 50V, ID = 16A†
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 16A
VDS = 80V
VGS = 10V, See Fig. 6 and 13 „†
VDD = 50V
ID = 16A
RG = 5.1
RD = 3.0Ω, See Fig. 10 „†
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5†
ƒ = 1.0MHz
G
D
S
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) †
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ. Max.
––– 20
––– 110
––– 1.3
170 250
1.1 1.6
Units
A
V
ns
µC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 11A, VGS = 0V „
TJ = 25°C, IF = 16A
di/dt = 100A/µs „†
G
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 2.0mH
RG = 25, IAS = 16A. (See Figure 12)
ƒ ISD 16A, di/dt 210A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 300µs; duty cycle 2%.
… t=60s, ƒ=60Hz
† Uses IRF540N data and test conditions
D
S

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International Rectifier


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