DataSheet.in

IRFI4227PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HEXFET Power MOSFET - International Rectifier

भाग संख्या IRFI4227PBF
समारोह HEXFET Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFI4227PBF?> डेटा पत्रक पीडीएफ

IRFI4227PBF pdf
IRFI4227PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
200 ––– ––– V VGS = 0V, ID = 250µA
∆ΒVDSS/TJ
Breakdown Voltage Temp. Coefficient ––– 240 ––– mV/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance ––– 21 25 mVGS = 10V, ID = 17A e
VGS(th)
Gate Threshold Voltage
3.0 ––– 5.0
V VDS = VGS, ID = 250µA
VGS(th)/TJ
Gate Threshold Voltage Coefficient
––– 11 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 200V, VGS = 0V
––– ––– 1.0 mA VDS = 200V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
47 ––– ––– S VDS = 25V, ID = 17A
Qg Total Gate Charge
––– 73 110 nC VDD = 100V, ID = 17A, VGS = 10Ve
Qgd Gate-to-Drain Charge
––– 21 –––
tst
Shoot Through Blocking Time
100 ––– ––– ns VDD = 160V, VGS = 15V, RG= 4.7
EPULSE
Energy per Pulse
––– 570 –––
L = 220nH, C= 0.4µF, VGS = 15V
µJ VDS = 160V, RG= 4.7Ω, TJ = 25°C
––– 910 –––
L = 220nH, C= 0.4µF, VGS = 15V
VDS = 160V, RG= 4.7Ω, TJ = 100°C
Ciss Input Capacitance
––– 4600 –––
VGS = 0V
Coss Output Capacitance
––– 460 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 91 –––
ƒ = 1.0MHz,
Coss eff.
Effective Output Capacitance
––– 360 –––
VGS = 0V, VDS = 0V to 160V
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
D
nH 6mm (0.25in.)
LS Internal Source Inductance
––– 7.5 –––
from package
and center of die contact
G
S
Avalanche Characteristics
Parameter
EAS
EAR
VDS(Avalanche)
IAS
Single Pulse Avalanche Energyd
Repetitive Avalanche Energy c
Repetitive Avalanche Voltage c
Avalanche Current d
Diode Characteristics
Parameter
IS @ TC = 25°C Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) c
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Typ.
Max.
Units
––– 54 mJ
––– 4.6 mJ
240 ––– V
––– 16 A
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
93
350
Max. Units
Conditions
26 MOSFET symbol
A showing the
100 integral reverse
p-n junction diode.
1.3 V TJ = 25°C, IS = 17A, VGS = 0V e
140 ns TJ = 25°C, IF = 17A, VDD = 50V
520 nC di/dt = 100A/µs e
2 www.irf.com

विन्यास 8 पेज
डाउनलोड[ IRFI4227PBF Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRFI4227PBFPower MOSFETInfineon
Infineon
IRFI4227PBFHEXFET Power MOSFETInternational Rectifier
International Rectifier


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English