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IRFI4229PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HEXFET Power MOSFET - International Rectifier

भाग संख्या IRFI4229PBF
समारोह HEXFET Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRFI4229PBF pdf
IRFI4229PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
250 ––– ––– V VGS = 0V, ID = 250µA
––– 340 ––– mV/°C Reference to 25°C, ID = 1mA
––– 38
46 mVGS = 10V, ID = 11A e
3.0 ––– 5.0
V VDS = VGS, ID = 250µA
VGS(th)/TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– -12 ––– mV/°C
––– ––– 20 µA VDS = 250V, VGS = 0V
––– ––– 250
VDS = 250V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
Qg Total Gate Charge
26 ––– –––
––– 73 110
S VDS = 25V, ID = 11A
nC VDD = 125V, ID = 11A, VGS = 10Ve
Qgd
tst
EPULSE
Ciss
Coss
Gate-to-Drain Charge
Shoot Through Blocking Time
Energy per Pulse
Input Capacitance
Output Capacitance
––– 24 –––
100 ––– –––
––– 770 –––
––– 1380 –––
––– 4480 –––
––– 400 –––
ns VDD = 200V, VGS = 15V, RG= 5.1
L = 220nH, C= 0.3µF, VGS = 15V
µJ VDS = 200V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.3µF, VGS = 15V
VDS = 200V, RG= 5.1Ω, TJ = 100°C
VGS = 0V
pF VDS = 25V
Crss
Coss eff.
Reverse Transfer Capacitance
Effective Output Capacitance
––– 100 –––
––– 270 –––
ƒ = 1.0MHz,
VGS = 0V, VDS = 0V to 200V
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
nH 6mm (0.25in.)
D
LS Internal Source Inductance
––– 7.5 –––
from package
G
and center of die contact
S
Avalanche Characteristics
Parameter
EAS
EAR
VDS(Avalanche)
IAS
Single Pulse Avalanche Energyd
Repetitive Avalanche Energy c
Repetitive Avalanche Voltage c
Avalanche Current d
Diode Characteristics
Parameter
IS @ TC = 25°C Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) c
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Typ.
Max.
Units
––– 110 mJ
––– 4.6 mJ
300 ––– V
––– 11 A
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
120
540
Max. Units
Conditions
18 MOSFET symbol
A showing the
72 integral reverse
p-n junction diode.
1.3 V TJ = 25°C, IS = 11A, VGS = 0V e
180 ns TJ = 25°C, IF = 11A, VDD = 50V
810 nC di/dt = 100A/µs e
2 www.irf.com

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International Rectifier


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