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DPBT8105 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 1A PNP SURFACE MOUNT TRANSISTOR - Diodes Incorporated

भाग संख्या DPBT8105
समारोह 1A PNP SURFACE MOUNT TRANSISTOR
मैन्युफैक्चरर्स Diodes Incorporated 
लोगो Diodes Incorporated लोगो 
पूर्व दर्शन
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DPBT8105 pdf
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Symbol Min
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICES
IEBO
-80
-60
-5
¾
¾
¾
hFE
VCE(SAT)
VBE(SAT)
VBE(ON)
100
100
80
30
¾
¾
¾
¾
Cobo
fT
¾
150
Max
¾
¾
¾
-100
-100
-100
¾
300
¾
¾
-0.3
-0.6
-1.2
-1.0
12
¾
Note: 4. Short duration pulse test used to minimize self-heating effect.
Unit
Test Condition
V IC = -100mA, IE = 0
V IC = -10mA, IB = 0
V IE = -100mA, IC = 0
nA VCB = -60V, IE = 0
nA VCES = -60V
nA VEB = -4V, IC = 0
IC = -1mA, VCE = -5V
V
IC = -500mA, VCE = -5V
IC = -1A, VCE = -5V
IC = -2A, VCE = -5V
V
IC = -500mA, IB = -50mA
IC = -1A, IB = -100mA
V IC = -1A, IB = -100mA
V IC = -1A, VCE = -5V
pF
MHz
VCB = -10V, f = 1.0MHz
VCE = -10V, IC = -50mA,
f = 100MHz
Typical Characteristics
350
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs
Ambient Temperature
400
350
300
250
200
150
100
50
0
-1
TA = 125ºC
TA = 85ºC
TA = 25ºC
TA = -55ºC
VCE = -5V
-10
-100
-1000
IC, COLLECTOR CURRENT (mA)
Fig. 2, DC Current Gain vs
Collector Current
-10,000
DS30514 Rev. 6 - 2
2 of 4
www.diodes.com
DPBT8105

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